This letter describes a new approach for fabricating quasi-vertical submillimeter-wave GaAs
Schottky diodes heterogeneously integrated to high-resistivity silicon substrates. The new …

This paper presents the first thermal characterization of terahertz quasi-vertical GaAs
Schottky diodes integrated on silicon. The devices are characterized using a …

Terahertz frequency multiplier is very important for terahertz transceiver front-end to achieve
terahertz high-speed wireless communication. In this paper, a study was conducted on the …

GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The
thermal characteristics of GaN Schottky diodes with single and double-row anode …

The design and fabrication process for implementing a proof-of-concept on-wafer probe with
integrated diode temperature sensor is reported. The sensor consists of a wafer probe …

This paper presents the first thermal characterization of terahertz quasi-vertical GaAs
Schottky diodes integrated on silicon. The devices are characterized using a …