Broadband Optical Properties of Bi2Se3

GA Ermolaev, IS Vyslanko, AP Tselin, MA El-Sayed… - Nanomaterials, 2023 - mdpi.com
Materials with high optical constants are of paramount importance for efficient light
manipulation in nanophotonics applications. Recent advances in materials science have …

Fabrication and Characterization of a Self-Powered n-Bi2Se3/p-Si Nanowire Bulk Heterojunction Broadband Photodetector

X Wang, Y Tang, W Wang, H Zhao, Y Song, C Kang… - Nanomaterials, 2022 - mdpi.com
In the present study, vacuum evaporation method is used to deposit Bi2Se3 film onto Si
nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self …

Electronic Properties of CdGa2S4: Ab Initio Calculations and Experimental Studies by Spectral Ellipsometry

IA Mamedova, ZA Jahangirli, NA Abdullayev - Physics of the Solid State, 2024 - Springer
Electronic properties of CdGa2S4 single crystals are studied experimentally by the spectral
ellipsometry and also theoretically from the first principles using the density functional theory …