The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

The decrease of the dimensions of metal oxide semiconductor (MOS) transistors has led to
the need for alternative, high-dielectric-constant (κ) oxides to replace silicon dioxide as their …

The ability to integrate crystalline metal oxide dielectric barrier layers into silicon structures
can open the way for a variety of novel applications which enhances the functionality and …

The Si/dielectric interface properties influence device performance significantly. Often the
interface is not stable and changes during and/or after the growth. For a better …

The interface electronic structure of a layered Zr–Zr O 2–Si O 2–Si (100) system was studied
with x-ray (h ν= 1254 eV) and ultraviolet (h ν= 21.2 eV) photoemission spectroscopies. In situ …

Pt-based alloy catalysts for oxygen reduction reaction (ORR) with outstanding performance
have been well-studied in recent years. Among these, Pt–lanthanide alloy catalysts have …

In this study, the anticorrosion potential of carboxylic compounds; Lanthanum 4-
hydroxycinnamate La (4OHCin) 3, Cerium 4-hydroxycinnamate Ce (4OHCin) 3 and …

First principles calculations of the (100) Si: Zr O 2 and Hf O 2 interfaces are presented. A
number of interface configurations satisfying valence bonding requirements are constructed …

The authors report on the impact of interface layer composition on electrical properties of
epitaxial Gd 2 O 3 thin films on Si (001) substrates. The electrical properties of epitaxial Gd 2 …