Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …

Recently, rapidly increased demands of integration and miniaturization continuously
challenge energy densities of dielectric capacitors. New materials with high recoverable …

Ferroelectricity is a material property that enables a large variety of device applications like
nonvolatile memories, variable capacitors, sensors, actuators, and energy …

Metastable rhombohedral hafnia-based ferroelectric films are emerging as a promising
candidate in ferroelectric nonvolatile memory technologies, but the limited critical thickness …

This study presents a theoretical investigation of the physical mechanisms governing small
signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide (Hf0. 5Zr0. 5O2 …

Abstract Zr-doped HfO 2 (Hf 0.5 Zr 0.5 O 2) ferroelectric thin films have garnered
considerable attention due to their appealing attributes, including a large bandgap (> 5 eV) …

We review the crystallization of hafnium-oxide-based ferroelectrics intended for back-end-of-
line (BEOL) integration. We discuss furnace, rapid thermal, and nanosecond Laser anneals …

This research presents advancements into the fabrication, operation and characterization of
electronic nanomaterials and devices. It focuses on the interfaces of metals, oxides and …