Unlike the majority of the silicon-based electronic devices, optoelectronic devices are
predominantly made using III–V and II–VI semiconductor compounds and their alloys …

A growth scheme at a low processing temperature for high crystalline-quality of ZnO
nanostructures can be a prime step** stone for the future of various optoelectronic devices …

Amorphous indium-gallium-zinc-oxide (α-IGZO) thin films were prepared by high-power
impulse magnetron sputtering. The film composition and properties were investigated. The …

In this work, sol–gel ZnO thin films were implanted with Al ions of various fluences to study
their electrical transport properties as transparent conducting oxide (TCO) layers …

Phosphorus (P) doped zinc oxide (ZnO) thin film has skillfully been deposited on flexible
substrate using radio frequency sputtering technique at room temperature under controlled …

We study the effect of oxygen vacancy enhancement in ZnO thin films through the surface
modification using H 2 annealing. After H 2 annealing, low-temperature PL spectra show the …

Here, we report a stable p-type conductivity in aqueous chemically grown ZnO nanorods
array films co-implanted with N and Li ions. We have successfully achieved p-type …

The interaction of H 2 molecules with a ZnO (0001) single crystal surface has been studied
over a wide pressure (10− 6–0.25 Torr) and temperature (300–600 K) range using ambient …

In this work, the feasibility of p-and n-type do** modifications in intrinsic n-type β-Bi2O3
via Group VII (F, Cl, Br, I) and Group II (Be, Mg, Ca, Sr) elements as well as N have been …

We report negative photoresponse or increase of resistance in nanocomposites of n-type
ZnO nanoparticles dispersed in a p-type polymer (PEDOT: PSS) under UV and visible light …