Amorphous oxide semiconductors have drawn considerable attention as a replacement for
ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and …

We experimentally demonstrate back-end-of-the-line (BEOL) compatible (<; 250° C thermal
budget) 1% tungsten (W)-doped amorphous In 2 O 3 (IWO) back-gate field-effect transistor …

Amorphous oxide semiconductors, especially indium oxide-based (InO x) thin films, have
been major candidates for high mobility with easy-to-use device processability. As for a …

Thin-film electronics has hugely benefitted from low-cost processes, large-area
processability, and multifunctionality. This has not only stimulated innovation in display and …

Thin-film transistors (TFTs) with high electrical performances (mobility> 10 cm2/V s, V th< 1
V, SS< 1 V/decade, on/off ratio≈ 106) obtained from the silicon-and oxide-based single …

Technologies for human–machine interactions are booming now. In order to achieve
multifunctional sensing abilities of electronic skins, further developments of various sensors …

The effects of radiation on tungsten doped indium oxide (IWO) thin-film transistors (TFTs)
have been well investigated in this Letter. In order to achieve high stability and excellent …

We offer design guidelines with a top–down and bottom–up design approach for oxide
semiconductor (OS) transistors, optimized for gain cell memory on a logic platform. With high …

The dependence of oxygen vacancy suppression on dopant species in amorphous indium
oxide (a-InO x) thin film transistors (TFTs) is reported. In a-InO x TFTs incorporating …

The high-performance atomic layer deposited (ALD) ultrathin (~ 2 nm) amorphous InZnO (-
IZO, indium: Zinc≈ 6: 4) channel thin-film transistors (TFTs) with a short channel length () of …