Advancements in 2D layered material memristors: unleashing their potential beyond memory

KA Nirmal, DD Kumbhar, AV Kesavan… - npj 2D Materials and …, 2024 - nature.com
The scalability of two-dimensional (2D) materials down to a single monolayer offers exciting
prospects for high-speed, energy-efficient, scalable memristors. This review highlights the …

Advancements in memory technologies for artificial synapses

A Sehgal, S Dhull, S Roy, BK Kaushik - Journal of Materials Chemistry …, 2024 - pubs.rsc.org
Neural networks (NNs) have made significant progress in recent years and have been
applied in a broad range of applications, including speech recognition, image classification …

Electrochemical synthesis and functional analysis of self-assembled Au-decorated polypyrrole for non-volatile memory and bio-inspired computing

RK Bhosale, SS Kundale, AR Shelake, HL Lokhande… - Organic …, 2024 - Elsevier
Functional and low-cost switching materials are necessary to sustain the development of
data storage and brain-inspired computing technologies. Polypyrrole (PPy) is one of the …

Exploring statistical approaches for accessing the reliability of Y2O3-based memristive devices

DD Kumbhar, S Kumar, M Dubey, A Kumar… - Microelectronic …, 2024 - Elsevier
Memristive devices have emerged as promising alternatives to traditional complementary
metal-oxide semiconductor (CMOS)-based circuits in the field of neuromorphic systems …

Unlocking the potential of effect of gamma irradiation on α-Fe2O3 nanoparticles for high-performance resistive switching applications

SJ Shinde, MR Waikar, SR Gurav, SL Patil… - Materials Science in …, 2024 - Elsevier
Resistive Switching (RS) devices present a promising solution for next-generation non-
volatile memories and artificial synaptic devices. This study investigates resistive switching …

Artificial synapses based on P (VDF-TrFE-CTFE)/sodium alginate heterojunction memristor for distance detection application

Y Sun, D Wen, Q Yuan, Y Wang - Materials Today Nano, 2024 - Elsevier
The utilization of heterogeneous architecture presents a promising approach to bolster the
reliability of memristors and achieve high-density memory with synaptic properties. The …

Revealing switching statistics and artificial synaptic properties of Bi2S3 memristor

P Terdalkar, DD Kumbhar, SD Pawar, KA Nirmal… - Solid-State …, 2025 - Elsevier
Complex information processing in neuromorphic systems relies on artificial neurons and
synapses as fundamental components. Frequently, memristors are utilized as artificial …

On the time series analysis of resistive switching devices

PS Thorat, DD Kumbhar, RD Oval, S Kumar… - Microelectronic …, 2025 - Elsevier
Resistive switching (RS) based memory or memristive devices have emerged as promising
candidates for resistive random-access memory (RRAM) and neuromorphic computing …

SnS based flexible Schottky barriers with asymmetric resistive switching characteristics

NM Philip, R Amiruddin, MCS Kumar - Materials Letters, 2024 - Elsevier
The present research reports tin-mono-sulphide (SnS) based Schottky diodes with
asymmetric resistive switching characteristics. The SnS thin films are deposited over flexible …

[HTML][HTML] Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes

SC Medina, LM Mercado, A Cardona-Rodríguez… - Physics Open, 2025 - Elsevier
The resistive switching (RS) effect in ferroelectric oxides continues to attract significant
attention due to its potential applications in nonvolatile memory and neuromorphic …