Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …

In this review paper, we first present an historical perspective of theoretical work and some
early experimental work in the field of dislocations in strained-layer epitaxy. Equilibrium …

The objective of this book is two-fold: to examine key properties of III-V compounds and to
present diverse material parameters and constants of these semiconductors for a variety of …

III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI)
substrates by template-assisted selective epitaxy (TASE) using metal organic chemical …

We show that strained epitaxial layers can relax by two competing mechanisms. At large
misfit, the surface becomes rough, allowing easy nucleation of dislocations. However, strain …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …

T he activation energy for dislocation nucleation from a stressed crack tip is calculated within
the Peierls framework, in which a periodic shear stress vs displacement relation is assumed …

Heterostructures in the form of thin layers of one material grown on a substrate have been
the subject of intense study for several years. In the case of semiconductor systems the aim …

This article describes an approach to the heteroepitaxy of lattice mismatched
semiconductors, that we call nanoheteroepitaxy. The theory developed here shows that the …