Unleashing the potential of gallium oxide: A paradigm shift in optoelectronic applications for image sensing and neuromorphic computing applications
Abstract Gallium oxide (Ga 2 O 3) is an ultrawide-bandgap semiconductor material that has
gained attention in recent years owing to its potential applications in optoelectronic devices …
gained attention in recent years owing to its potential applications in optoelectronic devices …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation
X Wang, H Li, H Liu, K Cao, S ** Density Reduction via Thermal Treatment in κ-Ga2O3
The interfacial properties of a planar SnO/κ-Ga2O3 p–n heterojunction have been
investigated by capacitance–voltage (C–V) measurements following a methodological …
investigated by capacitance–voltage (C–V) measurements following a methodological …
Rare-earth gallium garnet (RE3Ga5O12, RE= Eu, Gd, Dy, Er, and Yb) self-assembled nanostructure based battery type electrodes for efficient asymmetric …
The modern energy crisis has recently prompted researchers to seek alternatives. In this
context, using electrochemical energy resources for energy conversion and storage drew …
context, using electrochemical energy resources for energy conversion and storage drew …
Unraveling evolution of microstructural domains in the heteroepitaxy of β-Ga2O3 on sapphire
M Cui, Y Zhang, S Gu, C Zhang, FF Ren… - Applied Physics …, 2024 - pubs.aip.org
Addressing microstructural domain disorders within epitaxial β-Ga 2 O 3 is critical for phase
engineering and property improvement, whereas the associated evolution of β-Ga 2 O 3 …
engineering and property improvement, whereas the associated evolution of β-Ga 2 O 3 …
Shifting the paradigm: a functional hole‐selective transport layer for chalcopyrite solar cells
High‐efficiency Cu (In, Ga) Se2 solar cells rely on Ga grading to mitigate back surface
recombination. However, the inhomogeneous absorber has drawbacks, including increased …
recombination. However, the inhomogeneous absorber has drawbacks, including increased …
A correlation of conductivity medium and bioparticle viability on dielectrophoresis‐based biomedical applications
R Deivasigamani, NN Mohd Maidin… - …, 2023 - Wiley Online Library
Dielectrophoresis (DEP) bioparticle research has progressed from micro to nano levels. It
has proven to be a promising and powerful cell manipulation method with an accurate …
has proven to be a promising and powerful cell manipulation method with an accurate …
Electrophoretic Deposition of Conformal β-Ga2O3 Films on Arbitrary Substrates for Heterojunction-Based Deep-Ultraviolet Photodetectors
AS Nair, A Manilal, A Sharaf… - ACS Applied Optical …, 2024 - ACS Publications
The ultrawide bandgap semiconductor β-Ga2O3 has huge potential for the design of deep-
ultraviolet (UV) photodetectors and nanoscale high-power electronic applications. The …
ultraviolet (UV) photodetectors and nanoscale high-power electronic applications. The …
A review on synthesis and applications of gallium oxide materials
Abstract Gallium oxide (Ga 2 O 3), as a new kind of ultra− wide band gap semiconductor
material, is widely studied in many fields, such as power electronics, UV− blind …
material, is widely studied in many fields, such as power electronics, UV− blind …