Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …

A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

Orthorhombic gallium oxide (κ-Ga 2 O 3) is an ultra-wide bandgap semiconductor with great
potential in new generation electronics. Its application is hindered at present by the limited …

Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …

The short lifetime of electron–hole pairs and high electron–hole recombination rate at
surface states significantly limit the practical applications of hematite (α-Fe2O3) …

In this work, we systematically investigate the effects of growth parameters on the structural
and surface morphological properties of β-(Al x Ga1− x) 2O3 thin films grown on (010) β …

The β-(Al x Ga 1− x) 2 O 3 alloy represents an emerging ultrawide bandgap semiconductor
material for applications in high-power electronics and deep ultraviolet optoelectronics. The …

High quality heteroepitaxial (001)-oriented κ-(Al x Ga 1− x) 2 O 3/κ-Ga 2 O 3 quantum well
superlattice heterostructures were deposited by tin-assisted pulsed laser deposition on c …

Ga 2 O 3 is a promising wide-bandgap material for electronic applications. The metastable
orthorhombic κ phase is of particular interest due to its large predicted spontaneous …