Ion-beam-induced amorphization and recrystallization in silicon
Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …
Energetics of self-interstitial clusters in Si
The transient supersaturation in a system undergoing Ostwald ripening is related to the
cluster formation energy E fc as a function of cluster size n. We use this relation to study the …
cluster formation energy E fc as a function of cluster size n. We use this relation to study the …
Finding reaction pathways and transition states: r-ARTn and d-ARTn as an efficient and versatile alternative to string approaches
Finding transition states and diffusion pathways is essential to understand the evolution of
materials and chemical reactions. Such characterization is hampered by the heavy …
materials and chemical reactions. Such characterization is hampered by the heavy …
Defect-impurity engineering in implanted silicon
The basic results of the studies of defect–impurity interaction in implanted silicon are
presented. Factors affecting the way in which quasichemical reactions proceed—namely …
presented. Factors affecting the way in which quasichemical reactions proceed—namely …
A unified moment tensor potential for silicon, oxygen, and silica
Si and its oxides have been extensively explored in theoretical research due to their
technological importance. Simultaneously describing interatomic interactions within both Si …
technological importance. Simultaneously describing interatomic interactions within both Si …
[BOOK][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …
Complexity of small silicon self-interstitial defects
The combination of long-time, tight-binding molecular dynamics and real-time
multiresolution analysis techniques reveals the complexity of small silicon interstitial defects …
multiresolution analysis techniques reveals the complexity of small silicon interstitial defects …
Status and open problems in modeling of as-implanted damage in silicon
G Hobler, G Otto - Materials Science in Semiconductor Processing, 2003 - Elsevier
Implantation damage plays an important role in silicon device manufacturing since, eg, it
causes transient enhanced diffusion and influences the activation of dopants. Many studies …
causes transient enhanced diffusion and influences the activation of dopants. Many studies …
Self-interstitial aggregation in diamond
First-principles methods are used to investigate the self-interstitial and its aggregates in
diamond. The experimental assignment of the spin-1 R 2 EPR center to the single interstitial …
diamond. The experimental assignment of the spin-1 R 2 EPR center to the single interstitial …
Stability of si-interstitial defects: From point to extended defects
Trends in the growth of extended interstitial defects are extracted from extensive tight-
binding and ab inito local density approximation simulations. With an increasing number of …
binding and ab inito local density approximation simulations. With an increasing number of …