Silicon nanowire GAA-MOSFET: A workhorse in nanotechnology for future semiconductor devices

K Bhol, B Jena, U Nanda - Silicon, 2022 - Springer
In today's world, semiconductor nanowire GAA-MOSFET devices have stimulated a lot of
scientific research interest in the field of semiconductor. It has been observed as one of the …

Journey of Mosfet from planar to gate all around: A review

K Bhol, B Jena, U Nanda - Recent Patents on Nanotechnology, 2022 - benthamdirect.com
With the continuous miniaturization in device dimension to reach the expectation raised by
semiconductor users, the shape and size of the MOSFET are changing periodically. The …

Performance analysis of gate-stack dual-material DG MOSFET using work-function modulation technique for lower technology nodes

SK Das, U Nanda, SM Biswal, CK Pandey, LI Giri - Silicon, 2022 - Springer
Short channel effects (SCEs) along with mobility degradation has a great impact on CMOS
technology below 100 nm. These effects can be overcome by using gate and channel …

[HTML][HTML] Impact of deep cryogenic temperatures on gate stack dual material DG MOSFET performance: Analog and RF analysis

SK Das, SM Biswal, LI Giri, U Nanda - e-Prime-Advances in Electrical …, 2024 - Elsevier
By understanding the potential benefits of Gate Stack Dual Material double gate MOSFET
(DG MOSFET), this research aims to contribute to the investigation of its electrical …

Improved switching speed of a CMOS inverter using work-function modulation engineering

B Jena, S Dash, GP Mishra - IEEE transactions on electron …, 2018 - ieeexplore.ieee.org
This paper presents a detailed numerical analysis of work-function modulated cylindrical
gate metal-oxide-semiconductor field-effect transistor (MOSFET)-based CMOS inverter …

Quantum simulation of a junctionless carbon nanotube field-effect transistor with binary metal alloy gate electrode

K Tamersit - Superlattices and Microstructures, 2019 - Elsevier
In this paper, a quantum simulation study that highlights the role of linearly graded binary
metal alloy (LGBMA) gate in improving the performance of coaxially gated junctionless …

Subthreshold performance improvement of underlapped FinFET using workfunction modulated dual-metal gate technique

M Daga, GP Mishra - Silicon, 2021 - Springer
Workfunction modulated dual material gate FinFET (WMDMG-FinFET) is proposed to
improve the DC performance of the device. A dual metal gate FinFET with linear modulation …

Thermal influence on performance characteristics of double gate MOSFET biosensors with gate stack configuration

SK Das, SM Biswal, LI Giri, D Swain - Discover Applied Sciences, 2024 - Springer
This study observes the MOSFET's performance concerning several biomolecules for use as
a biosensor device. The double gate MOSFET with gate stack configuration has been …

Subthreshold current modeling of stacked dielectric triple material cylindrical gate all around (SD-TM-CGAA) Junctionless MOSFET for low power applications

P Kumar, M Vashisht, N Gupta, R Gupta - Silicon, 2021 - Springer
Abstract Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA)
Junctionless MOSFET has been explored for low power applications. This paper presents …

Improvement in electrostatic effeciency using workfunction modulated dual metal gate FinFET

M Daga, GP Mishra - Materials Today: Proceedings, 2021 - Elsevier
This paper demonstrates a 3-D simulation study of a workfunction modulated dual material
gate FinFET (WMDMGF). The source side gate material workfunction of a dual material gate …