Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …

GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …

This work describes the high-temperature performance and avalanche capability of normally-
off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors …

This work demonstrates multi-channel AlGaN/GaN Schottky barrier diodes (SBDs) with a
breakdown voltage (BV) over 10 kV, the highest BV reported in GaN devices to date. The …

Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …

Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high
critical electric field, robust antiradiation properties, and a high saturation velocity for high …