From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Do** Grown on Sapphire by Metalorganic Chemical Vapor Deposition
FG Tarntair, CY Huang, S Rana, KL Lin… - Advanced Electronic …, 2025 - Wiley Online Library
In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire
by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 …
by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 …
Phase‐dependent phonon heat transport in nanoscale gallium oxide thin films
X **, limited thermal conductivity of Ga2O3 epilayers, and toward realizing high …
Effects of growth temperature on phase transformation and crystal quality of Ga2O3 films grown on Si/AlN composite substrates by MOCVD
Y Hu, L Zhang, T Chen, Z Huang, BT Li, H Zhang… - Materials Science in …, 2024 - Elsevier
High-quality ε-phase Ga 2 O 3 thin film with a FWHM of 0.68° for the (002) plane in omega
scan is grown on Si/AlN composite substrate by MOCVD. The crystal phase evolution and …
scan is grown on Si/AlN composite substrate by MOCVD. The crystal phase evolution and …
[HTML][HTML] Study of thermal annealing on gallium oxide heteroepitaxial layers grown on SiC for vertical Schottky barrier diodes applications
CW Ku, ST Chung, FG Tarntair, CL Hsiao… - Applied Surface Science …, 2024 - Elsevier
This study successfully grew ꞵ-Ga 2 O 3 epitaxial films on silicon carbide substrates by
metalorganic chemical vapor deposition and fabricated vertical Schottky barrier diodes …
metalorganic chemical vapor deposition and fabricated vertical Schottky barrier diodes …
Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD
We investigate the thin film quality of the epitaxial layer on Sn-doped (001)-oriented β-Ga 2
O 3 single crystal substrates. The homoepitaxial layer is grown by metal organic chemical …
O 3 single crystal substrates. The homoepitaxial layer is grown by metal organic chemical …