Deep-learning-assisted physics-driven MOSFET current-voltage modeling

MY Kao, H Kam, C Hu - IEEE Electron Device Letters, 2022 - ieeexplore.ieee.org
In this work, we propose using deep learning to improve the accuracy of the partially-physics-
based conventional MOSFET current-voltage model. The benefits of having some physics …

[HTML][HTML] Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines

X Li, Z Wu, G Rzepa, M Karner, H Xu, Z Wu… - Fundamental …, 2024 - Elsevier
Advancements in the semiconductor industry introduce novel channel materials, device
structures, and integration methods, leading to intricate physics challenges when …

A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning

AP Singh, VK Mishra, S Akhter - Silicon, 2023 - Springer
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …

Deep learning-based BSIM-CMG parameter extraction for 10-nm FinFET

MY Kao, F Chavez, S Khandelwal… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
A new deep learning (DL)-based parameter extraction method is presented in this brief; 50k
training cases are generated by Monte Carlo simulations of these preselected parameters in …

TCAD-augmented machine learning with and without domain expertise

H Dhillon, K Mehta, M ** profile of stacked nanosheet transistors
H Xu, W Gan, L Cao, C Yang, J Wu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Complex nonlinear dependence of ultra-scaled transistor performance on its channel
geometry and source/drain (S/D) do** profile bring obstacles in the advanced technology …

Machine learning augmented compact modeling for simultaneous improvement in computational speed and accuracy

K Sheelvardhan, S Guglani… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, we have presented the use of prior physics knowledge-based artificial neural
networks (KBANNs) to improve the simulation speed and accuracy of compact models for …

Machine-learning-based compact modeling for sub-3-nm-node emerging transistors

SM Woo, HJ Jeong, JY Choi, HM Cho, JT Kong… - Electronics, 2022 - mdpi.com
In this paper, we present an artificial neural network (ANN)-based compact model to
evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been …

Deep learning approach to inverse grain pattern of nanosized metal gate for multichannel gate-all-around silicon nanosheet MOSFETs

C Akbar, Y Li, WL Sung - IEEE Transactions on Semiconductor …, 2021 - ieeexplore.ieee.org
For the first time, a deep learning (DL) algorithm is presented to study the effect of the source
of variability on the performance of semiconductor nanodevice. This paper reports the …