Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …
[HTML][HTML] A review of GaN RF devices and power amplifiers for 5G communication applications
In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power
amplifier, a critical component with stringent specification requirements that dictates the …
amplifier, a critical component with stringent specification requirements that dictates the …
Heterogeneous and monolithic 3D integration technology for mixed-signal ICs
For next-generation system-on-chips (SoCs) in diverse applications (RF, sensor, display,
etc.) which require high-performance, small form factors, and low power consumption …
etc.) which require high-performance, small form factors, and low power consumption …
RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates
Enhancement-mode (E-mode) submicron 0.45--GaN gate HEMTs on 200-mm high-
resistivity-Si (HRS) substrates have been demonstrated with high uniformity and high overall …
resistivity-Si (HRS) substrates have been demonstrated with high uniformity and high overall …
High-performance AlN/GaN MISHEMTs on Si with in-situ SiN enhanced ohmic contacts for mobile mm-Wave front-end applications
In this letter, we demonstrated an AlN/GaN metal-insulator-semiconductor high electron
mobility transistor (MISHEMT) on a Si substrate with in-situ SiN as gate dielectric with …
mobility transistor (MISHEMT) on a Si substrate with in-situ SiN as gate dielectric with …
Surface state spectrum of AlGaN/AlN/GaN extracted from static equilibrium electrostatics
We extract an AlGaN surface state spectrum with a density () ranging between 12 and 12
eV− 1 cm− 2. The low is achieved with in situ SiN passivation. is extracted from ungated …
eV− 1 cm− 2. The low is achieved with in situ SiN passivation. is extracted from ungated …
Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts
A Chanuel, Y Gobil, CL Hsu, M Charles… - … on Electron Devices, 2022 - ieeexplore.ieee.org
We present an access technology suitable for scaled gallium nitride (GaN) high electron
mobility transistor (HEMT) in Ka-band. The comparison between OFF-state characteristics of …
mobility transistor (HEMT) in Ka-band. The comparison between OFF-state characteristics of …
Linearity Characterization of Enhancement-Mode p-GaN Gate Radio-Frequency HEMT
We characterize and evaluate the RF linearity of an enhancement-mode-GaN gate high-
electron-mobility-transistor (HEMT) on a 200-mm high-resistivity-silicon substrate. Nearly flat …
electron-mobility-transistor (HEMT) on a 200-mm high-resistivity-silicon substrate. Nearly flat …
Time dependence of RF losses in GaN-on-Si substrates
GaN-on-Si HEMT technology suffers from RF losses and non-linearities originating from the
conductive Si substrate. The understanding and modeling of substrate performance are the …
conductive Si substrate. The understanding and modeling of substrate performance are the …
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices
The GaN-on-Si technology for the upcoming RF/6G/mm-Wave applications requires a robust
buffer design for enhanced device performance and improved reliability. The defect states …
buffer design for enhanced device performance and improved reliability. The defect states …