The use of organic, oxide and low-dimensional materials in field-effect transistors has now
been studied for decades. However, properly reporting and comparing device performance …

Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …

To continue to improve integrated circuit performance and functionality, scaled transistors
with short channel lengths and low thickness are needed. But further scaling of silicon …

Monolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D)
semiconductor holding potential for flexible integrated circuits (ICs). The most important …

As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

Large-area and high-quality two-dimensional crystals are the basis for the development of
the next-generation electronic and optical devices. The synthesis of two-dimensional …

In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-
deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is …

Metal oxide films are essential in most electronic devices, yet they are typically deposited at
elevated temperatures by using slow, vacuum-based processes. We printed native oxide …

Humans can clearly perceive surroundings efficiently while consuming little energy because
of human intelligence and powerful vision system. Thus, it has been a long‐sought dream …