Concepts of ferrovalley material and anomalous valley Hall effect

WY Tong, SJ Gong, X Wan, CG Duan - Nature communications, 2016 - nature.com
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological
importance as it offers additional opportunities for information storage, as well as electronic …

Strain related new sciences and devices in low-dimensional binary oxides

J Jiang, S Pendse, L Zhang, J Shi - Nano Energy, 2022 - Elsevier
The possibility of generating a large range of elastic strain in low-dimensional materials
offers a vast design space that has led to a plethora of scientific and technological …

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

H Hu, WY Tong, YH Shen, X Wan… - npj Computational …, 2020 - nature.com
Valley, the energy extrema in the electronic band structure at momentum space, is regarded
as a new degree of freedom of electrons, in addition to charge and spin. The studies focused …

Combined piezoelectricity and ferrovalley properties in Janus monolayer VClBr

YF Zhao, YH Shen, H Hu, WY Tong, CG Duan - Physical Review B, 2021 - APS
Recently, the concept of ferrovalley materials has been proposed. These systems, in which
ferromagnetism or ferroelectricity triggers spontaneous valley polarization, can be applied to …

First-principles studies of multiferroic and magnetoelectric materials

YW Fang, HC Ding, WY Tong, WJ Zhu, X Shen… - Science Bulletin, 2015 - Elsevier
Multiferroics are materials where two or more ferroic orders coexist owing to the interplay
between spin, charge, lattice and orbital degrees of freedom. The explosive expansion of …

Intrinsic valley polarization of magnetic VSe2 monolayers

J Liu, WJ Hou, C Cheng, HX Fu, JT Sun… - Journal of Physics …, 2017 - iopscience.iop.org
Intrinsic valley polarization can be obtained in VSe 2 monolayers with broken inversion
symmetry and time reversal symmetry. First-principles investigations reveal that the …

Electrical control of the valley degree of freedom in 2D ferroelectric/antiferromagnetic heterostructures

H Hu, WY Tong, YH Shen, CG Duan - Journal of Materials Chemistry C, 2020 - pubs.rsc.org
Valley, the energy extrema in the electronic band structure, is regarded as a new degree of
freedom of electrons, in addition to charge and spin. Valleytronics focuses on the valley …

Electrically tunable polarizer based on 2D orthorhombic ferrovalley materials

XW Shen, WY Tong, SJ Gong, CG Duan - 2D Materials, 2017 - iopscience.iop.org
The concept of ferrovalley materials has been proposed very recently. The existence of
spontaneous valley polarization, resulting from ferromagnetism, in such hexagonal 2D …

Flexoelectric effect induced p–n homojunction in monolayer GeSe

JD Zheng, YF Zhao, ZQ Bao, YH Shen, Z Guan… - 2D …, 2022 - iopscience.iop.org
Recently, two-dimensional in-plane ferroelectric materials group-IV monochalcogenides MX
(M= Ge, Sn; X= S, Se) have attracted much attention due to their rich physical properties …

Electronic properties of EuO and Eu2O3: FP-LAPW and LCAO computations and Compton spectroscopy strategies

L Meena, SK Meena, U Ahuja, NL Heda… - Physica Scripta, 2023 - iopscience.iop.org
Spin projected energy bands and density of states (DOS) have been deduced using full
potential linearized augmented plane wave (FP-LAPW) with density functional theory (DFT) …