A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

Owing to its high carrier mobility, electrical conductivity, and thermal/chemical stability,
graphene is an ideal candidate material for photodetection. However, the weak light …

Seamlessly integrating III-V active devices with Si passive components in a monolithic
manner is the key for fully integrated Si photonics. In this article, we demonstrate high …

Integrating light emission and detection functionalities using efficient III-V materials on Si
wafers is highly desirable for Si-based photonic integrated circuits. To fulfill the need of high …

The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si
heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs …

Excellent performance of InAs quantum dot (QD) lasers grown on Si in the datacom and
telecom bands has been reported in recent years. InP QD lasers on Si with emission …

Investigation of high-performance lasers monolithically grown on silicon (Si) could promote
the development of silicon photonics in regimes other than the 1.3-1.5 µm band. 980 nm …

An efficient photodetector (PD) is a key component in silicon-based photonic integrated
circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation …

We review the integration techniques for incorporating various materials into silicon-based
devices. We discuss on-chip light sources with gain materials, linear electro-optic …

A Si-based photodetector is the core device of Si-based optical interconnection; its material
and performance are the key factors restricting its development. This paper conducts …