The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The present paper attempts an overview of a presently very active research field: the III-
nitrides and their interesting possibilities for a range of device applications employing …

We present a comprehensive study of the transport dynamics of electrons in the ternary
compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using …

We present a first-principles framework to investigate the electron scattering channels and
transport properties for polar materials by combining the exact solution of the linearized …

The dependence of electron mobility on growth conditions and threading dislocation density
(TDD) was studied for n−-GaN layers grown by ammonia-based molecular beam epitaxy …

We studied experimentally and theoretically the substrate-orientation impact on carrier
transport and capture in InGaN multiple quantum well (MQW) laser diodes (LDs) with …

In this paper, we present a study of the effect of temperature on the two-dimensional electron
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …

The nowadays notable development of all the modern technology, fundamental for the
progress and well being of world society, imposes a great deal of stress in the realm of basic …

Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …

To meet the miniaturization of all-solid-state high-power microwave drive technology based
on photoconductive semiconductor switches (PCSSs), a vertical gallium nitride (GaN) PCSS …