Semiconductor industry is currently facing with the fact that conventional submicron CMOS
technology is approaching the end of their capabilities, at least when it comes to scaling the …

This article gives a detailed review on the evaluation of present development and future
projection of high mobility strained silicon Metal-Oxide-Semiconductor Field-Effect …

Improvement in performance of Si-Metal Oxide Semiconductor Field Effect Transistors
(MOSFET) through scaling is very difficult due to the several physical phenomenon mainly …

In the current work, an embedded Si 1-x Ge x source/drain p-MOSFET architecture, with
varying gate length, in range of 32 nm to 50 nm, has been considered for studying the …

Die außerordentlichen Steigerungen der Funktionalität und Produktivität in der
Halbleiterindustrie sind zum wesentlichen Teil auf eine Verkleinerung der Strukturdetails auf …

Graphene and silicene are promising 2D materials for designing next generation transistors,
owing to their unusually high electron mobility, thermal conductivity and flexibility. In this …

In recent development of nanoelectronic devices, strained silicon Metal-Oxide-
Semiconductor Field-Effect Transistor (MOSFET) has been identified as a promising …

Este trabalho apresenta um estudo que inclui a comparação experimental entre transistores
de porta tripla (FinFETs) fabricados sobre lâminas de Silício-Sobre Isolante (SOI) e os …