Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Conductive bridging random access memory—materials, devices and applications
We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors
The threshold switching effect is considered of outmost importance for a variety of
applications ranging from the reliable operation of crossbar architectures to emulating …
applications ranging from the reliable operation of crossbar architectures to emulating …
SiO2 based conductive bridging random access memory
We present a review on the subject of Conductive Bridging Random Access Memory
(CBRAM) based on copper-or silver-doped silicon dioxide. CBRAM is a promising type of …
(CBRAM) based on copper-or silver-doped silicon dioxide. CBRAM is a promising type of …
Resistive switching study on diffusive memristors using electrochemical impedance spectroscopy
Diffusive memristors demonstrate volatile resistive switching powered by the diffusion of
silver nanoparticles through the matrix of silicon dioxide. The equivalent circuit of the high …
silver nanoparticles through the matrix of silicon dioxide. The equivalent circuit of the high …
[HTML][HTML] Robust hybrid perovskite self-rectifying memristor for brain-inspired computing and data storage
Conventional computing architectures are not suited to meet the unique workload
requirements of artificial intelligence and deep learning, which has sparked a growing …
requirements of artificial intelligence and deep learning, which has sparked a growing …
Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device
We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-
HEMTs employing SiO 2-based threshold switching devices in series with the source. The …
HEMTs employing SiO 2-based threshold switching devices in series with the source. The …
Possible equivalent circuit model and physical structures of sputter-deposited silicon oxide film showing resistive switching
Based on the results of experiments on the resistive switching behaviors of sputter-
deposited silicon oxide films, this paper proposes a possible equivalent circuit model to …
deposited silicon oxide films, this paper proposes a possible equivalent circuit model to …
Filament behaviour and stability in ECM memristive devices studied by electrochemical impedance spectroscopy
The filament in the electrochemical metallization memories (ECM/CBRAM)[1],[2] and
valence change memory (VCM/OxRAM)[2],[3] devices defines the low resistive state (LRS) …
valence change memory (VCM/OxRAM)[2],[3] devices defines the low resistive state (LRS) …
Non-volatile resistive switching in oxide ion conductor BiYO3 thin films
We experimentally demonstrate non-volatile resistive switching (RS) with a resistance
window of∼ 10× in oxide ion conductor BiYO 3 (BYO) thin films.(111)-oriented BYO films of …
window of∼ 10× in oxide ion conductor BiYO 3 (BYO) thin films.(111)-oriented BYO films of …
[کتاب][B] Cu-silica based programmable metallization cell: fabrication, characterization and applications
W Chen - 2017 - search.proquest.com
Abstract The Programmable Metallization Cell (PMC) is a novel solid-state resistive
switching technology. It has a simple metal-insulator-metal “MIM” structure with one metal …
switching technology. It has a simple metal-insulator-metal “MIM” structure with one metal …