As CMOS technology begins to face significant scaling challenges, considerable research
efforts are being directed to investigate alternative device technologies that can serve as a …

Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …

Physical unclonable functions (PUFs) are increasingly used for authentication and
identification applications as well as the cryptographic key generation. An important feature …

Compared to purely electrical neuromorphic devices, those stimulated by photon, pressure,
or/and chemical signals have gained burgeoning attentions due to their real sense …

Optoelectronic synaptic devices are of great scientific and practical importance because of
various potential applications such as ocular simulating and optical–electrical managers …

Spin-transfer torque magnetic RAM (STT MRAM) has emerged as a promising candidate for
on-chip memory in future computing platforms. We present a cross-layer (device-circuit …

The emergence of spin-transfer torque magnetic RAM (STT-MRAM) as a leading candidate
for future high-performance nonvolatile memory has led to increased research interest …

We present a layout-aware optimization methodology for spin-transfer torque (STT) MRAMs,
considering the dependence of cell area on the access transistor width (W FET), number of …

Spin-transfer-torque magnetic random access memory (STT-MRAM) is a promising
emerging memory technology because of its various advantageous features such as …

In recent years, Physical Unclonable Function (PUF) based on the inimitable and
unpredictable disorder of physical devices has emerged to address security issues related …