Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …

Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …

Time-Dependent Dielectric Breakdown (TDDB) models for silica (SiO2)-based dielectrics
are revisited so as to better understand the ability of each model to explain quantitatively the …

One of the most serious technology roadblocks for SiC DMOSFETs is the significant
occurrence of early failures in time-dependent-dielectric-breakdown testing. Conventional …

The aim of this paper is to develop a path-size weibit (PSW) route choice model with an
equivalent mathematical programming (MP) formulation under the stochastic user …

Herein, a novel technique to monitor the quality and reliability of thin nano‐scale dielectric
films is suggested. The method is based on the modification of the current stress technique …

The unique physical, chemical, and electronic properties of rare earth oxides have been of
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …

The dielectric breakdown approach for forming nanopores has greatly accelerated the pace
of research in solid‐state nanopore sensing, enabling inexpensive formation of nanopores …

The paper suggests a design of radiation sensors based on metal-oxide-semiconductor
(MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which …

Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the
performance of Si‐based devices. However, owing to the impact of the external …