Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors

W Yang, L Dou, H Zhu, YY Noh - Small Structures, 2024 - Wiley Online Library
Tin‐based halide perovskites garner attention as a promising semiconducting layer material
for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based …

Fabrication of high-performance tin halide perovskite thin-film transistors via chemical solution-based composition engineering

H Zhu, Y Reo, G Park, W Yang, A Liu, YY Noh - Nature Protocols, 2025 - nature.com
Metal halide perovskite semiconductors have attracted considerable attention because they
enable the development of devices with exceptional optoelectronic and electronic properties …

Ion Migration in Tin-Halide Perovskites

Z Le, A Liu, Y Reo, S Bai, YY Noh, H Zhu - ACS Energy Letters, 2024 - ACS Publications
Metal-halide perovskites, exhibiting exceptional optoelectronic properties, have emerged as
a highly promising class of semiconductors for diverse applications. However, the inherent …

Enhancing Stability and Performance in Tin‐Based Perovskite Field‐Effect Transistors Through Hydrogen Bond Suppression of Organic Cation Migration

W Yang, K Zhang, W Yuan, L Zhang, C Qin… - Advanced …, 2024 - Wiley Online Library
Ion migration poses a substantial challenge in perovskite transistors, exerting detrimental
effects on hysteresis and operational stability. This study focuses on elucidating the …

Multidimensional Deep Ultraviolet (DUV) Synapses Based on Organic/Perovskite Semiconductor Heterojunction Transistors for Antispoofing Facial Recognition …

J **a, C Gao, C Peng, Y Liu, PA Chen, H Wei… - Nano Letters, 2024 - ACS Publications
Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for
facial recognition systems. While neuromorphic systems offer integrated sensing-memory …

High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering

X Yang, Y Liu, S Yang, Y Wu, Y Lei… - Advanced Functional …, 2024 - Wiley Online Library
Metal‐halide perovskite semiconductors have garnered great attention in optoelectronic
devices due to their remarkable properties and processing capabilities. Among them, tin …

Ion-Gel Gated Perovskite Field-Effect Transistors with Low Power Consumption and High Stability for Neuromorphic Applications

J **a, Z Wan, C Peng, Y Liu, PA Chen… - … Applied Materials & …, 2025 - ACS Publications
Ruddlesden–Popper (RP) tin halide perovskites (THPs), exemplified by PEA2SnI4, are
promising two-dimensional semiconductors for optoelectronic applications, yet their field …

Machine learning, theoretical exploration and device simulation of Cs2NaXCl6 (X= Bi, In, Sb, Sc) double halide perovskites with spatial applications

C Chen, Y Tuo, Z Wang, M Sun, Y Du, Z Han, X Yun… - Solar Energy, 2025 - Elsevier
With the growing interest in cosmic spatial, perovskite solar cells are not only for terrestrial
applications, but are also attractive as a space technology. However, the extraterrestrial …

Recent Advances of Lead-Free Halide Perovskites: From Synthesis to Applications

Y Wang, J Liu, Y Liu, S Li, X Xu, Z Lou - Journal of Materials Chemistry …, 2024 - pubs.rsc.org
Lead-based halide perovskites have taken semiconductor optoelectronics research by storm
due to their impressive optical and optoelectronic properties, and have emerged as …

Perovskite Field-Effect Transistor Memory Employing a Large Grain Sized α-Phase Formamidinium Lead Triiodide

D Kim, YR Park, C Kim, S Lee, H Min… - ACS Applied Electronic …, 2024 - ACS Publications
Halide perovskite materials have emerged as highly promising candidates for a wide range
of electrical and optical devices due to their high charge carrier mobility, tunable band gaps …