The paper reviews the progress in the modeling of metalorganic vapor phase epitaxy
(MOVPE) of various III–V compounds. The recent studies focused on chemical gas-phase …

We report the performance of 1‐eV GaNAsSb‐based photovoltaic samples grown on a Si
substrate using molecular beam epitaxy at different As/Ga beam equivalent pressure (BEP) …

The aim of this paper is to show—from both an experimental and a theoretical point of view—
why it is so difficult to incorporate thallium into III-V semiconductors. The experimental part …

GaAs growth by hydride vapor phase epitaxy (HVPE) has regained interest as a potential
route to low cost, high efficiency thin film photovoltaics. In order to attain the highest …

In this work, we investigate the growth of GaTlAs single-crystals on GaAs (001) substrates
using low-temperature solid-source molecular-beam-epitaxy (LT-SS-MBE). We have …

The problem of defect formation in the GaAs and InGaAs layers grown by low-temperature
molecular-beam epitaxy is discussed. The effect of growth conditions (temperature and flux …

We describe briefly a cheap and non polluting technique to grow epitaxial GaAs layers,
several hundred microns thick, in a matter of hour. Detectors consisting of a p+/i/n+ structure …

GaAs is an important electronic material for high-frequency and optoelectronic applications
that are not achievable with Si-based microelectronics. The two main advantages of GaAs …

В статье обсуждается проблема дефектообразования в слоях GaAs и InGaAs,
выращенных методом молекулярно-лучевой эпитаксии при низких температурах …