Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
Self‐powered InP nanowire photodetector for single‐photon level detection at room temperature
Highly sensitive photodetectors with single‐photon level detection are one of the key
components to a range of emerging technologies, in particular the ever‐growing field of …
components to a range of emerging technologies, in particular the ever‐growing field of …
A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
We report the first study on do** assessment in Te-doped GaAsSb nanowires (NWs) with
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …
GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting
C Tong, A Delamarre, R De Lépinau, A Scaccabarozzi… - Nanoscale, 2022 - pubs.rsc.org
With their unique structural, optical and electrical properties, III–V nanowires (NWs) are an
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …
Formation mechanism of twinning superlattices in doped GaAs nanowires
Recent investigations of III–V semiconductor nanowires have revealed periodic zinc-blende
twins, known as twinning superlattices, that are often induced by a high-impurity dopant …
twins, known as twinning superlattices, that are often induced by a high-impurity dopant …
Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs (Sb) nanowires
T Schreitmüller, D Kumar Saluja, CE Mead… - Physical Review …, 2024 - APS
Silicon (Si) impurities are among the most widely used dopants in GaAs-based electronic
and optoelectronic materials, including low-dimensional systems such as nanowires (NWs) …
and optoelectronic materials, including low-dimensional systems such as nanowires (NWs) …
Be, Te, and Si do** of GaAs nanowires: Theory and experiment
Controllable do** of III–V nanowires grown by the vapor–liquid–solid method remains a
challenging task. In sharp contrast to planar layers of the same materials, dopants mainly …
challenging task. In sharp contrast to planar layers of the same materials, dopants mainly …
P–n junctions in planar GaAs nanowires
Control over the do** at the nanoscale during the growth of nanostructures is one of the
key challenges of device fabrication. In this work we study p (Zn)-and n (Sn)-do** …
key challenges of device fabrication. In this work we study p (Zn)-and n (Sn)-do** …
Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy
D Ruhstorfer, S Mejia, M Ramsteiner… - Applied Physics …, 2020 - pubs.aip.org
The realization of n-type conduction in directly bottom-up grown Si-doped GaAs nanowires
(NWs) by molecular beam epitaxy has remained a long-standing challenge. Unlike the …
(NWs) by molecular beam epitaxy has remained a long-standing challenge. Unlike the …
A study of n-do** in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector
This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell
temperature variation (T GaTe) on the morphological, optical, and electrical properties of …
temperature variation (T GaTe) on the morphological, optical, and electrical properties of …