Immersion in water in labour and birth
ER Cluett, E Burns - Cochrane Database of Systematic …, 2009 - cochranelibrary.com
Background Enthusiasts suggest that labouring in water and waterbirth increase maternal
relaxation, reduce analgesia requirements and promote a midwifery model of care. Critics …
relaxation, reduce analgesia requirements and promote a midwifery model of care. Critics …
Multi-voltage CMOS circuit design
V Kursun, EG Friedman - 2006 - books.google.com
This book presents an in-depth treatment of various power reduction and speed
enhancement techniques based on multiple supply and threshold voltages. A detailed …
enhancement techniques based on multiple supply and threshold voltages. A detailed …
Toward sustainable ultrawide bandgap van der Waals materials: An ab initio screening effort
The sustainable development of next‐generation device technology is paramount in the face
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …
[KSIĄŻKA][B] Memory systems: cache, DRAM, disk
B Jacob, D Wang, S Ng - 2010 - books.google.com
Is your memory hierarchy stop** your microprocessor from performing at the high level it
should be? Memory Systems: Cache, DRAM, Disk shows you how to resolve this problem …
should be? Memory Systems: Cache, DRAM, Disk shows you how to resolve this problem …
Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications
CW Jiang, MA Green - Journal of applied physics, 2006 - pubs.aip.org
Quantum dot superlattices offer prospects for new generations of semiconductor devices.
One possible recently suggested application is in tandem solar cells based entirely on …
One possible recently suggested application is in tandem solar cells based entirely on …
MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations
In this paper, we explore the scaling limits of alternative gate dielectrics based on their direct-
tunneling characteristics and gate-leakage requirements for future CMOS technology …
tunneling characteristics and gate-leakage requirements for future CMOS technology …
[KSIĄŻKA][B] Design for manufacturability and statistical design: a constructive approach
Design for Manufacturability and Statistical Design: A Constructive Approach provides a
thorough treatment of the causes of variability, methods for statistical data characterization …
thorough treatment of the causes of variability, methods for statistical data characterization …
Leakage power modeling and optimization in interconnection networks
X Chen, LS Peh - Proceedings of the 2003 international symposium on …, 2003 - dl.acm.org
Power will be the key limiter to system scalability as interconnection networks take up an
increasingly significant portion of system power. In this paper, we propose an architectural …
increasingly significant portion of system power. In this paper, we propose an architectural …
Modeling for bipolar resistive memory switching in transition-metal oxides
A model which describes the bipolar resistive switching in transition-metal oxides is
presented. To simulate the effect of switching, we modeled results of do** by oxygen …
presented. To simulate the effect of switching, we modeled results of do** by oxygen …
Direct tunneling leakage current and scalability of alternative gate dielectrics
We explore the scaling limits of alternative gate dielectrics based on their direct tunneling
characteristics and gate leakage requirements for future complementary metal–oxide …
characteristics and gate leakage requirements for future complementary metal–oxide …