A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Standards for the characterization of endurance in resistive switching devices

M Lanza, R Waser, D Ielmini, JJ Yang, L Goux… - ACS …, 2021 - ACS Publications
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides

R Ge, X Wu, M Kim, J Shi, S Sonde, L Tao, Y Zhang… - Nano …, 2018 - ACS Publications
Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience
including topologically protected charge transport, 1, 2 spatially separated excitons, 3 and …

Amorphous carbon films for electronic applications

IS Kim, CE Shim, SW Kim, CS Lee, J Kwon… - Advanced …, 2023 - Wiley Online Library
While various crystalline carbon allotropes, including graphene, have been actively
investigated, amorphous carbon (a‐C) thin films have received relatively little attention. The …

Zero-static power radio-frequency switches based on MoS2 atomristors

M Kim, R Ge, X Wu, X Lan, J Tice, JC Lee… - Nature …, 2018 - nature.com
Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic
layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices …

Overview of resistive random access memory (RRAM): Materials, filament mechanisms, performance optimization, and prospects

H Wang, X Yan - physica status solidi (RRL)–Rapid Research …, 2019 - Wiley Online Library
Because conventional nonvolatile memory is limited by process technology and physical
size, resistive random access memory (RRAM) gradually enters the field of view due to its …

Graphene and related materials for resistive random access memories

F Hui, E Grustan‐Gutierrez, S Long… - Advanced Electronic …, 2017 - Wiley Online Library
Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

[HTML][HTML] Resistive switching in emerging materials and their characteristics for neuromorphic computing

M Asif, A Kumar - Materials Today Electronics, 2022 - Elsevier
Resistive random access memory would be an important component of microelectronics in
the era of big data storage due to its efficient characteristics such as low cost, fast operating …

Accurate computational prediction of core-electron binding energies in carbon-based materials: A machine-learning model combining density-functional theory and …

D Golze, M Hirvensalo, P Hernández-León… - Chemistry of …, 2022 - ACS Publications
We present a quantitatively accurate machine-learning (ML) model for the computational
prediction of core–electron binding energies, from which X-ray photoelectron spectroscopy …

Experiment-driven atomistic materials modeling: a case study combining X-ray photoelectron spectroscopy and machine learning potentials to infer the structure of …

T Zarrouk, R Ibragimova, AP Bartók… - Journal of the American …, 2024 - ACS Publications
An important yet challenging aspect of atomistic materials modeling is reconciling
experimental and computational results. Conventional approaches involve generating …