Impact of back gate bias on analog performance of do**less transistor
In this brief, the impact of back gate bias (V gb), on analog performance of silicon on
insulator do**less transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are …
insulator do**less transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are …
Aging mechanism of p-type do**less JLFET: NBTI and channel-hot-carrier stress
In this work, an extensive study of the aging mechanisms of the p-type do**less JLFET
(DL JLFET) structure is reported for the first time. The negative-bias-temperature-instability …
(DL JLFET) structure is reported for the first time. The negative-bias-temperature-instability …
Investigation of silicon aging effects in do**less PUF for reliable security solution
Do**less (DLFET) provides better reliability against any physically doped devices. Hence,
this paper aims to provide a fair comparison between conventional junctionless (JLFET) and …
this paper aims to provide a fair comparison between conventional junctionless (JLFET) and …
An ultra-low-power high-speed variation-resilient DLJLT-PUF for IOT devices
Physically unclonable functions (PUFs) have emerged as attractive primitives to resolve the
various issues of hardware security in integrated circuits, such as cryptographic key …
various issues of hardware security in integrated circuits, such as cryptographic key …
Dual-mode reconfigurable do**less transistor: A novel device structure
A novel device structure is proposed in this paper that can function as an Extruded Base-
Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded …
Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded …
Assessment of BTI‐induced deterioration in vacuum based undoped structure
In this paper, an assessment of bias temperature instability (BTI) in high− κ/vacuum high-
κ/vacuum based dual gate do**less JLFET (HKV‐DLJLFET) is carried out at 15 nm …
κ/vacuum based dual gate do**less JLFET (HKV‐DLJLFET) is carried out at 15 nm …
A highly sensitive MOSFET gas sensor based on charge plasma and catalytic metal gate
This manuscript presents, for the first time, a catalytic metal gate‐based charge plasma (CP)
MOSFET with improved sensitivity for gas detection applications. In this design, CP refers to …
MOSFET with improved sensitivity for gas detection applications. In this design, CP refers to …
Two dimensional modeling of dual material double gate TFET in stacked hetero-dielectrics with split high-K materials
this article develops the analytical modelling of a dual material double gate TFET including
gate engineering using a hetero–dielectric gate stack with split high K dielectrics. The …
gate engineering using a hetero–dielectric gate stack with split high K dielectrics. The …
High speed ultra-low-lower lulse-triggered JLFET Flip-Flop
Power efficiency and enhancing the speed are two major challenges of traditional D-Flip-
Flops (D-FF) for designing energy-efficient IOT (internet of thing) devices. Therefore, the …
Flops (D-FF) for designing energy-efficient IOT (internet of thing) devices. Therefore, the …
Design and Analysis of 2.4 to 3.5 GHz Low-Noise Amplifier for Sub-6 Cellular LTE/5G NR Application Using CMOS 110 nm SOI Process Technology
RD Khobragade, BR Vidhale - International Conference on …, 2023 - Springer
The proposed article provides the design, analysis of low-noise amplifier (LNA) for sub-6
cellular LTE/5G NR application (Comer DJ and Comer DT, IEEE Trans Circuits Syst 51 (I): 8 …
cellular LTE/5G NR application (Comer DJ and Comer DT, IEEE Trans Circuits Syst 51 (I): 8 …