Recent advances in avalanche photodiodes
JC Campbell - Journal of Lightwave Technology, 2015 - ieeexplore.ieee.org
Until the early 2000's, the avalanche photodiode (APD) was widely deployed in high-
performance optical receivers that operated up to 10 Gb/s. In subsequent years, the use of …
performance optical receivers that operated up to 10 Gb/s. In subsequent years, the use of …
Recent advances in telecommunications avalanche photodiodes
JC Campbell - Journal of Lightwave Technology, 2007 - opg.optica.org
For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is
frequently the photodetector of choice owing to its internal gain, which provides a sensitivity …
frequently the photodetector of choice owing to its internal gain, which provides a sensitivity …
Recent advances in avalanche photodiodes
The development of high-performance optical receivers has been a primary driving force for
research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic …
research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic …
[PDF][PDF] Evolution of low-noise avalanche photodetectors
J Campbell - IEEE Journal of Selected Topics in Quantum …, 2022 - par.nsf.gov
Evolution of Low-Noise Avalanche Photodetectors Page 1 IEEE JOURNAL OF SELECTED
TOPICS IN QUANTUM ELECTRONICS, VOL. 28, NO. 2, MARCH/APRIL 2022 3800911 …
TOPICS IN QUANTUM ELECTRONICS, VOL. 28, NO. 2, MARCH/APRIL 2022 3800911 …
Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
MA Saleh, MM Hayat, PP Sotirelis… - … on Electron Devices, 2001 - ieeexplore.ieee.org
It is, by now, well known that McIntyre's localized carrier-multiplication theory cannot explain
the suppression of excess noise factor observed in avalanche photodiodes (APDs) that …
the suppression of excess noise factor observed in avalanche photodiodes (APDs) that …
Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes
Avalanche noise measurements have been performed on a range of homojunction GaAs
p/sup+/-in/sup+/and n/sup+/-ip/sup+/diodes with" i" region widths,/spl omega/from 2.61 to …
p/sup+/-in/sup+/and n/sup+/-ip/sup+/diodes with" i" region widths,/spl omega/from 2.61 to …
A review on III–V compound semiconductor short wave infrared avalanche photodiodes
Y Liang, CP Veeramalai, G Lin, X Su, X Zhang… - …, 2022 - iopscience.iop.org
The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated
photonics system. Specifically, III–V compound APD has become one of the main …
photonics system. Specifically, III–V compound APD has become one of the main …
Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes
MA Saleh, MM Hayat, BEA Saleh… - IEEE transactions on …, 2000 - ieeexplore.ieee.org
The conventional McIntyre carrier multiplication theory for avalanche photodiodes (APDs)
does not adequately describe the experimental results obtained from APDs with thin …
does not adequately describe the experimental results obtained from APDs with thin …
Avalanche photodiodes with an impact-ionization-engineered multiplication region
P Yuan, S Wang, X Sun, XG Zheng… - IEEE Photonics …, 2000 - ieeexplore.ieee.org
Avalanche photodiodes with an impact-ionization-engineered multiplication region Page 1 1370
IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 10, OCTOBER 2000 Avalanche …
IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 10, OCTOBER 2000 Avalanche …
Avalanche multiplication in InAlAs
YL Goh, DJ Massey, ARJ Marshall… - … on Electron Devices, 2006 - ieeexplore.ieee.org
A systematic study of avalanche multiplication on a series of In 0.52 Al 0.48 As p+-in+ and
n+-ip+ diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mum has …
n+-ip+ diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mum has …