A roadmap review of thermally conductive polymer composites: critical factors, progress, and prospects

Z Wang, Z Wu, L Weng, S Ge, D Jiang… - Advanced Functional …, 2023 - Wiley Online Library
Recently, the need for miniaturization and high integration have steered a strong technical
wave in develo** (micro‐) electronic devices. However, excessive amounts of heat may …

Emerging interface materials for electronics thermal management: experiments, modeling, and new opportunities

Y Cui, M Li, Y Hu - Journal of Materials Chemistry C, 2020 - pubs.rsc.org
Thermal management is becoming a critical technology challenge for modern electronics
with decreasing device size and increasing power density. One key materials innovation is …

Flexible thermal interface based on self-assembled boron arsenide for high-performance thermal management

Y Cui, Z Qin, H Wu, M Li, Y Hu - Nature communications, 2021 - nature.com
Thermal management is the most critical technology challenge for modern electronics.
Recent key materials innovation focuses on develo** advanced thermal interface of …

Idealizing Tauc plot for accurate bandgap determination of semiconductor with ultraviolet–visible spectroscopy: a case study for cubic boron arsenide

H Zhong, F Pan, S Yue, C Qin, V Hadjiev… - The Journal of …, 2023 - ACS Publications
The Tauc plot is widely used to determine the bandgap of semiconductors, but the actual
plot often exhibits significant baseline absorption below the expected bandgap, leading to …

Integration of boron arsenide cooling substrates into gallium nitride devices

JS Kang, M Li, H Wu, H Nguyen, T Aoki, Y Hu - Nature Electronics, 2021 - nature.com
Thermal management is critical in modern electronic systems. Efforts to improve heat
dissipation have led to the exploration of novel semiconductor materials with high thermal …

Advances in thermal conductivity for energy applications: a review

Q Zheng, M Hao, R Miao, J Schaadt… - Progress in Energy, 2021 - iopscience.iop.org
Thermal conductivity is a crucial material property for a diverse range of energy
technologies, ranging from thermal management of high power electronics to thermal …

Wafer-scale bonded GaN–AlN with high interface thermal conductance

M Li, K Pan, Y Ge, K Huynh, MS Goorsky… - Applied Physics …, 2024 - pubs.aip.org
Wide and ultrawide bandgap semiconductors, such as GaN, play a crucial role in high-
power applications, yet their performance is often constrained by thermal management …

Effects of impurities on the thermal and electrical transport properties of cubic boron arsenide

X Chen, C Li, Y Xu, A Dolocan, G Seward… - Chemistry of …, 2021 - ACS Publications
Cubic boron arsenide (BAs) is a promising compound semiconductor for thermal
management applications due to its high thermal conductivity, exceeding 1000 W m–1 K–1 …

A MoS2/BAs heterojunction as photodetector

G **ong, J Lu, R Wang, Z Lin, S Lu, J Li, Z Tong… - Materials Today …, 2024 - Elsevier
With high thermal conductivity and carrier mobility, cubic boron arsenide (BAs) shows huge
potential in high-power and high-speed optoelectronic devices. However, researches about …

Anomalous thermal transport under high pressure in boron arsenide

S Li, Z Qin, H Wu, M Li, M Kunz, A Alatas, A Kavner… - Nature, 2022 - nature.com
High pressure represents extreme environments and provides opportunities for materials
discovery,,,,,,–. Thermal transport under high hydrostatic pressure has been investigated for …