Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Thin van der Waals (vdW) layered magnetic materials hold the possibility of realizing vdW
heterostructures with new functionalities. Here, we report on the realization and investigation …

The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …

Электроны обладают зарядом и спином, но до недавнего времени их зарядовые и
спиновые свойства рассматривались по отдельности. В классической электронике …

A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as
the magnetic random-access memory, magnetic sensors and programmable logic devices …

Magnetoresistive (MR) sensors have been identified as promising candidates for the
development of high-performance magnetometers due to their high sensitivity, low cost, low …

The spin-valve effect has been the focus of spintronics over the last decades due to its
potential for application in many spintronic devices. Two-dimensional (2D) van der Waals …

Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile
storage cells in high-performance solid-state magnetic random access memories (MRAM) …