B-do** on the electronic structure and photocatalytic properties of g-C3N4/Janus PtSSe heterojunctions: A first-principles study
J He, G Liu, C Zhang, G Zhang - Micro and Nanostructures, 2023 - Elsevier
The effect of B do** on the stability, electronic structure, work function, and optical
properties of gC 3 N 4/Janus PtSSe heterojunctions has been investigated based on the …
properties of gC 3 N 4/Janus PtSSe heterojunctions has been investigated based on the …
Microstructure and heat storage performance of TiO2 doped corundum-magnesium aluminate spinel composite ceramics
J Wu, J Yu, X Xu, Y Shen, S Qiu, D Zhang - Ceramics International, 2024 - Elsevier
In this study, corundum-magnesium aluminate spinel (C-MAS) composite heat storage
ceramics were synthesized by co-adding MgO and TiO 2 to Al 2 O 3. The effects of TiO 2 and …
ceramics were synthesized by co-adding MgO and TiO 2 to Al 2 O 3. The effects of TiO 2 and …
A perfect ultra-wideband solar absorber with a multilayer stacked structure of Ti–SiO 2–GaAs: structure and outstanding characteristics
K An, C Ma, T Sun, Q Song, L Bian, Z Yi, J Zhang… - Dalton …, 2025 - pubs.rsc.org
In this paper, we introduce an entirely new solar absorber design—a multi-layer periodic
stacked structure. Through coupling effects, this design has perfect ultra-wideband …
stacked structure. Through coupling effects, this design has perfect ultra-wideband …
Energy conversion performance limits of a dual-junction thermophotovoltaic device
C Fan, T Liao - Energy Conversion and Management, 2024 - Elsevier
Photovoltaic (PV) cell as a key component of the thermophotovoltaic cells (TPVCs),
regulating its photon trappable performance is helpful for achieving high-efficient conversion …
regulating its photon trappable performance is helpful for achieving high-efficient conversion …
Analysis of the optical properties and electronic structure of semiconductors of the Cu2NiXS4 (X= Si, Ge, Sn) family as new promising materials for optoelectronic …
D Nematov - Journal of Optics and Photonics Research, 2024 - ojs.bonviewpress.com
In this work, the optoelectronic characteristics of kesterites of the Cu 2 NiXS 4 system (X= Si,
Ge, Sn) were studied. The electronic properties of the Cu 2 NiXS 4(X= Si, Ge, Sn) system …
Ge, Sn) were studied. The electronic properties of the Cu 2 NiXS 4(X= Si, Ge, Sn) system …
An enhanced electromagnetic energy harvester based on dual ratchet structure with secondary energy recovery
X Liang, G Shi, Y **a, S Jia, Y Sun, X Hu… - Smart Materials and …, 2024 - iopscience.iop.org
With the continuous advancement of ultra-low-power electronic devices, capturing energy
from the surrounding environment to power these smart devices has emerged as a new …
from the surrounding environment to power these smart devices has emerged as a new …
High temperature dependent absorber-emitter pair nanostructure metamaterial matched with low band-gap PV cell for solar thermo photovoltaic application
One of the metamaterial concepts is the integration of selective broad-band thermal emitters
with broad-band solar absorption, which is the foundation of technology that is effectively …
with broad-band solar absorption, which is the foundation of technology that is effectively …
[PDF][PDF] Оптические и электронные свойства кестеритов семейства Cu2NiXS4 (X= Si, Ge, Sn)
Д Нематов, Б Иброим, К Ботуров, И Рауфов - researchgate.net
В данной работе проанализированы оптоэлектронные свойства кестеритов систем
Cu2NiXS4 (X= Si, Ge, Sn). С помощью первопринципных расчетов в рамках теории …
Cu2NiXS4 (X= Si, Ge, Sn). С помощью первопринципных расчетов в рамках теории …
[PDF][PDF] СВОЙСТВА КЕСТЕРИТОВ СЕМЕЙСТВА Cu2NiXS4 (X= Si, Ge, Sn)
ММ Каюмов, Б Иброхим, К Ботуров, И Рауфов - researchgate.net
В данной работе проанализированы оптоэлектронные свойства кестеритов систем
Cu2NiXS4 (X= Si, Ge, Sn). С помощью первопринципных расчетов в рамках теории …
Cu2NiXS4 (X= Si, Ge, Sn). С помощью первопринципных расчетов в рамках теории …