A 0.28 THz power-generation and beam-steering array in CMOS based on distributed active radiators

K Sengupta, A Hajimiri - IEEE Journal of Solid-State Circuits, 2012 - ieeexplore.ieee.org
In this paper, we present a scalable transmitter architecture for power generation and beam-
steering at THz frequencies using a centralized frequency reference, sub-harmonic signal …

A 79 GHz phase-modulated 4 GHz-BW CW radar transmitter in 28 nm CMOS

V Giannini, D Guermandi, Q Shi… - IEEE Journal of Solid …, 2014 - ieeexplore.ieee.org
Millimeter-wave sensors perform robust and accurate remote motion sensing. We propose a
28 nm CMOS Radar TX that modulates a 79 GHz carrier with a 2 Gsps Pseudo-Noise …

A 0.53-THz Subharmonic Injection-Locked Phased Array With 63- W Radiated Power in 40-nm CMOS

K Guo, Y Zhang, P Reynaert - IEEE Journal of Solid-State …, 2018 - ieeexplore.ieee.org
This paper presents a 0.53-THz subharmonic injection-locked 1× 4 phased array based on
an injection-locked oscillator (ILO) chain. Thanks to the ILO chain, the phase errors in the …

Terahertz integrated circuits and systems for high-speed wireless communications: Challenges and design perspectives

P Heydari - IEEE Open Journal of the Solid-State Circuits …, 2021 - ieeexplore.ieee.org
This paper presents challenges and design perspectives for terahertz (THz) integrated
circuits and systems. THz means different things to different people. From International …

A CMOS two-element 170-GHz fundamental-frequency transmitter with direct RF-8PSK modulation

P Nazari, S Jafarlou, P Heydari - IEEE Journal of Solid-State …, 2019 - ieeexplore.ieee.org
A CMOS 170-GHz fundamental-frequency transmitter (TX) realizing the 8PSK modulation
scheme directly in the RF domain is presented. The use of direct RF modulation obviates the …

D-band frequency quadruplers in BiCMOS technology

M Kucharski, MH Eissa, A Malignaggi… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
This paper presents two D-band frequency quadruplers (FQs) employing different circuit
techniques. First FQ is a 129–171-GHz stacked Gilbert-cell multiplier using a bootstrap** …

W-band silicon-based frequency synthesizers using injection-locked and harmonic triplers

CC Wang, Z Chen, P Heydari - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
Two monolithically integrated W-band frequency synthesizers are presented. Implemented
in a 0.18 μm SiGe BiCMOS with f T/f max of 200/180 GHz, both circuits incorporate the same …

A 77-GHz 2T6R transceiver with injection-lock frequency sextupler using 65-nm CMOS for automotive radar system application

YH Hsiao, YC Chang, CH Tsai… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
In this paper, a CMOS multichannel transceiver (TRX) is proposed for angular identification
in automotive car radar applications. Two transmitters (TXs) and six receivers (RXs) are …

A BiCMOS W-band 2× 2 focal-plane array with on-chip antenna

Z Chen, CC Wang, HC Yao… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
This paper presents a W-band 2× 2 focal-plane array (FPA) for passive millimeter-wave
imaging in a standard 0.18 μm SiGe BiCMOS process (f T/f max= 200/180 GHz). The FPA …

A W-band CMOS receiver chipset for millimeter-wave radiometer systems

L Zhou, CC Wang, Z Chen… - IEEE Journal of Solid …, 2011 - ieeexplore.ieee.org
This paper presents a W-band receiver chipset for passive millimeter-wave imaging in a 65
nm standard CMOS technology. The system comprises a direct-conversion receiver front …