An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …

In this study, the electron beam evaporation method is used to generate an indium tin oxide
(ITO) thin film on a glass substrate at room temperature. The surface characteristics of this …

Fractal and multifractal analysis is performed on the atomic force microscopy (AFM) images
of the surface morphologies of the LiF thin films of thickness 10nm, 20nm, and 40nm …

Atomic layer deposited (ALD) Y2O3 thin films have been thoroughly investigated for optical
or electronic applications. The coherent spectroscopy of lanthanide ions doped into this …

Surface morphology and growth dynamics of silver nanoparticles grown by solid-state
dewetting of sputtered precursor silver films are studied using atomic force microscopy …

Global water pollution and scarcity of water resources are turning increasingly into serious
threats to the survival of all living organisms on Earth. This study offers an influent strategy …

In this study, indium tin oxide (ITO) thin films were deposited by electron beam evaporation
method on glass substrates at room temperature, followed by postannealing at 200 and …

In this work, we developed the rescaled range method and its formalism to investigate the
surface morphology dynamics of indium tin oxide (ITO) thin films. The dynamic scaling …

Effects of different post-deposition annealing (PDA) ambient [O2, N2O, N2, forming gas
(95% N2-5% H2), and Ar] on the physical and metal–oxide–semiconductor (MOS) …

Effects of post-deposition annealing time (15, 30, and 45 minutes) have been studied on a
Y2O3 film sputtered on a Si substrate. A negative flatband voltage shift was observed in a …