As semiconductor device scaling faces a severe technical bottleneck, vertical die stacking
technologies have been developed to obtain high performance, high density, low latency …

This article focuses on the 3-D modeling methodology development of the wafer-to-wafer
hybrid bonding (W2W-HB) annealing process. With its successful application in a 2-stack …

With the increase in computational costs driven by the use of artificial intelligence,
enhancing the performance of semiconductor systems while improving efficiency has …

This work focuses on the effect of Cu protrusion on the reliability of High Bandwidth Memory
(HBM) fabricated by wafer-to-wafer hybrid bonding (W2W-HB) process. The thermal stress …

Hybrid bonding enables the commercialization of ultra‐fine pitch high‐density 3D packages.
Cu/SiO2 hybrid bonding is the standard packing interface recently introduced in the industry …

This letter describes the use of area-selective electroless Cu deposition for topography
control of Cu-SiCN hybrid bonding pads. The electroless deposition of Cu allows one to …

Chiplet-based packaging technology integrates multiple heterogeneous dies with different
functions and materials into a single system as a LEGO-based approach using advanced …

Room temperature hybrid bonding is a good candidate to replace thermal compression
bonding due to its better resistance to Cu oxidation and its capability for large die …

Bump-less copper (Cu) bonding is currently the most attractive approach for fine-pitch (< 20
μm) 3D integration due to its compatibility with the wafer back-end-of-the-line (BEOL) …

We present a modeling framework to guide the development and optimization of the hybrid
bonding process. The key challenge is to achieve fully-bonded Cu-Cu metal interfaces/pads …