Photodiode and photocapacitor properties of Au/CdTe/p-Si/Al device
The electrical and photoconductivity properties of CdTe on p-type silicon photodiode were
investigated by current–voltage (I–V) and capacitance time (C–t) measurements. The current …
investigated by current–voltage (I–V) and capacitance time (C–t) measurements. The current …
Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics
This study presents comprehensive results on the changes of the crystal properties, surface
morphology, chemical composition and bonding structures based on X-ray photoelectron …
morphology, chemical composition and bonding structures based on X-ray photoelectron …
Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor
In this study, we investigated the effects of applied voltage and frequencies on the electrical
properties of Al/(Er 2 O 3 (150 nm)/SiO 2 (20 nm)/n-Si)/Al MOS capacitor. The e-beam …
properties of Al/(Er 2 O 3 (150 nm)/SiO 2 (20 nm)/n-Si)/Al MOS capacitor. The e-beam …
Composite metal oxide semiconductor based photodiodes for solar panel tracking applications
Abstract The Zn 1− x Al x O: Cu 2 O composite films were synthesized by the sol gel method
to fabricate photodiodes. The transparent metal oxide Zn 1− x Al x O: Cu 2 O thin films were …
to fabricate photodiodes. The transparent metal oxide Zn 1− x Al x O: Cu 2 O thin films were …
Cu2ZnSnS4: graphene oxide nanocomposites based photoresponse devices
Abstract Graphene oxide: Cu 2 ZnSnS 4 nanocomposites were synthesized by the chemical
method to fabricate photodiodes. The structural properties of the nanocomposites were …
method to fabricate photodiodes. The structural properties of the nanocomposites were …
Radiation response of zirconium silicate P-MOS capacitor
The chemical bonding of zirconium silicate films were examined by FTIR. The capacitance-
voltage (CV) measurements before and after irradiation were performed at high frequency …
voltage (CV) measurements before and after irradiation were performed at high frequency …
Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors
The aim of this study is to reduce the oxide and interface-trap charges and also improve the
stability at the oxide–semiconductor interface by growing a SiO 2 interface layer on a Si …
stability at the oxide–semiconductor interface by growing a SiO 2 interface layer on a Si …
Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO2/SiO2/p-Si/Al
In this paper, we synthesized a novel structure of Au/CNTs/TiO 2/SiO 2/p-Si/Al that hasn't
been explored before. The real and imaginary parts of impedance, as well as Cole-Cole …
been explored before. The real and imaginary parts of impedance, as well as Cole-Cole …
[PDF][PDF] Frequency Dependent Electrical Characteristics of Al/SiO2/SiNWs/n-Si MOS Capacitors
In this work, the frequency dependent electrical characteristics of Al/SiO2/SiNWs/n-Si MOS
capacitors were investigated. The electrical properties of the capacitors were calculated from …
capacitors were investigated. The electrical properties of the capacitors were calculated from …
Self-assembled patches in PtSi/n-Si (111) diodes
Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–
voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent …
voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent …