The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

Abstract Two-dimensional (2D) layered materials are attracting a lot of attention because of
unique physicochemical properties that are intriguing for both fundamental research and …

In the field of semiconductors, three-dimensional (3D) integration not only enables
packaging of more devices per unit area, referred to as 'More Moore'but also introduces …

Single-crystalline high-κ dielectric materials are desired for the development of future two-
dimensional (2D) electronic devices. However, curent 2D gate insulators still face …

Two-dimensional transition metal dichalcogenides could potentially be used to create
transistors that are scaled beyond the capabilities of silicon devices. However, despite …

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant
attention for its potential in energy conversion, thermoelectrics and spintronics. However …

The sustainable development of next‐generation device technology is paramount in the face
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …

With continuous size scaling, the surface dangling bonds and short‐channel effects will
degrade silicon based transistor performance. Thus, it is of great importance to seek new …

Multiferroic materials offer a promising avenue for manipulating digital information by
leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the …