The future of two-dimensional semiconductors beyond Moore's law

KS Kim, J Kwon, H Ryu, C Kim, H Kim, EK Lee… - Nature …, 2024 - nature.com
The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Vapour-phase deposition of two-dimensional layered chalcogenides

T Zhang, J Wang, P Wu, AY Lu, J Kong - Nature Reviews Materials, 2023 - nature.com
Abstract Two-dimensional (2D) layered materials are attracting a lot of attention because of
unique physicochemical properties that are intriguing for both fundamental research and …

Three-dimensional integration of two-dimensional field-effect transistors

D Jayachandran, R Pendurthi, MUK Sadaf, NU Sakib… - Nature, 2024 - nature.com
In the field of semiconductors, three-dimensional (3D) integration not only enables
packaging of more devices per unit area, referred to as 'More Moore'but also introduces …

Yttrium-do**-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors

J Jiang, L Xu, L Du, L Li, G Zhang, C Qiu, LM Peng - Nature Electronics, 2024 - nature.com
The van der Waals systems could be used to overcome the issue of Fermi-level pinning in
contacts of transistors based on two-dimensional semiconductors. However, the lack of …

The roadmap of 2D materials and devices toward chips

A Liu, X Zhang, Z Liu, Y Li, X Peng, X Li, Y Qin, C Hu… - Nano-Micro Letters, 2024 - Springer
Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …

Graphene nanoribbons grown in hBN stacks for high-performance electronics

B Lyu, J Chen, S Wang, S Lou, P Shen, J **e, L Qiu… - Nature, 2024 - nature.com
Van der Waals encapsulation of two-dimensional materials in hexagonal boron nitride (hBN)
stacks is a promising way to create ultrahigh-performance electronic devices,,–. However …

Synthesis, modulation, and application of two-dimensional TMD heterostructures

R Wu, H Zhang, H Ma, B Zhao, W Li, Y Chen… - Chemical …, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

Two-dimensional semiconductors and transistors for future integrated circuits

L Yin, R Cheng, J Ding, J Jiang, Y Hou, X Feng… - ACS …, 2024 - ACS Publications
Silicon transistors are approaching their physical limit, calling for the emergence of a
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …

Transistor engineering based on 2D materials in the post-silicon era

S Zeng, C Liu, P Zhou - Nature Reviews Electrical Engineering, 2024 - nature.com
The miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has
been the driving force behind the development of integrated circuits over the past 60 years; …

Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies

D Fan, W Li, H Qiu, Y Xu, S Gao, L Liu, T Li… - Nature …, 2023 - nature.com
Two-dimensional transition metal dichalcogenides could potentially be used to create
transistors that are scaled beyond the capabilities of silicon devices. However, despite …