New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are
electrically driven at room temperature,. To fully utilize the benefits of large-scale, low-cost …

Despite the rapid commercialization of III-nitride semiconductor devices for applications in
visible and ultraviolet optoelectronics and in high-power and high-frequency electronics …

This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …

With this review paper we provide an overview of the main degradation mechanisms that
limit the long-term reliability of IR semiconductor lasers for silicon photonics applications …

We report on the degradation of the electro-optical parameters of (In) AlGaN-based
ultraviolet-B light-emitting diodes (LEDs) stressed at a constant dc current of 100 mA and the …

Lasers emitting in the 600 nm wavelength range have gained attention for a number of
important applications, including optical information processing, plastic fiber communication …

We report on the degradation mechanisms and dynamics of silicone encapsulated
ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of. The …

AlGaN∕ GaN multiquantum barriers (MQBs) were introduced into violet AlInGaN laser
diodes with an InGaN multiquantum-well structure, resulting in drastic improvements in …