[HTML][HTML] Recent advances of In2O3-based thin-film transistors: A review

BK Yap, Z Zhang, GSH Thien, KY Chan… - Applied Surface Science …, 2023 - Elsevier
The electronics industry has witnessed a surge in demand for semiconductor materials,
prompting researchers to explore active semiconductors that can effectively meet the …

Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors

XL Wang, HL Zhao, G Tarsoly, H Zhu, JY Lee… - Applied Surface …, 2024 - Elsevier
In 2 O 3 is a transparent semiconductor layer due to its transparency, high mobility, and
solution processability. In this paper, we study the effect of focused oxygen plasma treatment …

Light-Stimulated Artificial Synapse with Memory and Learning Functions by Utilizing an Aqueous Solution-Processed In2O3/AlLiO Thin-Film Transistor

D Jiang, J Li, W Fu, Q Chen, Y Yang… - ACS Applied …, 2020 - ACS Publications
Light-stimulated artificial synapse shows broad application prospects in the field of
neuromorphic computing. Implementation of an all-inorganic solid oxide phototransistor will …

Do** of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device …

G Tarsoly, JY Lee, KJ Heo, SJ Kim - ACS Applied Electronic …, 2023 - ACS Publications
Amorphous In2O3 is an emerging metal oxide semiconductor that is used widely because of
its high mobility and solution processability. Fully aqueous processing methods without …

Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films

J Zhu, S Hu, B Chen, Y Zhang, S Wei, X Guo… - The Journal of …, 2023 - pubs.aip.org
The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-
line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction …

Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

A Mancinelli, S Bolat, J Kim… - ACS Applied …, 2020 - ACS Publications
Solution processing is an attractive alternative to standard vacuum fabrication techniques for
the large-area manufacturing of metal oxide (MO x)-based electron devices. Here, we report …

Design of different oxygen content and high performance bilayer In2O3 thin-film transistors at room temperature for flexible electronics

M Zheng, A Abliz, D Wan - Applied Surface Science, 2025 - Elsevier
In this study, homojunction bilayer In 2 O 3 thin film transistors (TFTs) were prepared by RF-
magnetron sputtering at room temperature. Herein, an active channel of bilayer In 2 O 3 …

Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing

Q Zhang, G **
JY Lee, G Tarsoly, XL Wang, HL Zhao… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The solution processing of metal–oxide–semiconductor devices is a less energy-intensive
route for fabricating transparent, high-performance electronics for the display industry. On …