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Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Comprehensive review on electrical noise analysis of TFET structures
Abstract Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for
conventional CMOS due to their advantages like very low leakage current and steep sub …
conventional CMOS due to their advantages like very low leakage current and steep sub …
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Reconfigurable transistors are an emerging device technology adding new functionalities
while lowering the circuit architecture complexity. However, most investigations focus on …
while lowering the circuit architecture complexity. However, most investigations focus on …
Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects
Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced
one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold …
one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold …
[HTML][HTML] The metal–insulator phase change in vanadium dioxide and its applications
Vanadium dioxide is an unusual material that undergoes a first-order Metal–Insulator
Transition (MIT) at 340 K, attracting considerable interest for its intrinsic properties and its …
Transition (MIT) at 340 K, attracting considerable interest for its intrinsic properties and its …
Heterogeneous integration of III–V materials by direct wafer bonding for high-performance electronics and optoelectronics
III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …
electronics and optoelectronics owning to their high carrier mobilities and potential for …
III–V heterostructure tunnel field-effect transistor
The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state
switches to overcome the power dissipation challenge in ultra-low power integrated circuits …
switches to overcome the power dissipation challenge in ultra-low power integrated circuits …
Low-frequency noise in nanowires
DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
Recent advances in low‐dimensional heterojunction‐based tunnel field effect transistors
Since the continuous scaling down of the transistor channel length, extraordinary
improvement is achieved in the switching speed. However, the rising leakage current …
improvement is achieved in the switching speed. However, the rising leakage current …