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Numerical study of JAM-GS-GAA FinFET: a Fin aspect ratio optimization for upgraded analog and intermodulation distortion performance
This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …
Optimization of high-k and gate metal workfunction for improved analog and intermodulation performance of Gate Stack (GS)-GEWE-SiNW MOSFET
This work optimizes the gate engineering scheme (both gate stack and gate metal
workfunction engineering) of Stacked Gate (SG) Gate Electrode Workfunction Engineered …
workfunction engineering) of Stacked Gate (SG) Gate Electrode Workfunction Engineered …
Performance assessment of high-k soi gan finfet with different fin aspect ratio for rf/wireless applications
This paper proposes High-k SOI GaN FinFET which is a potential candidate for more
efficient and high-performance electronic devices attributable to high carrier mobility and …
efficient and high-performance electronic devices attributable to high carrier mobility and …
Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability
In this paper, reliability issues of Stacked Gate (SG)-Gate Electrode Workfunction
Engineered (GEWE)-Silicon Nanowire (SiNW) MOSFET is examined over a wide range of …
Engineered (GEWE)-Silicon Nanowire (SiNW) MOSFET is examined over a wide range of …
Impact of noise and interface trap charge on a heterojunction dual-gate vertical TFET device
Herein, a vertical T-shaped heterojunction tunnel field-effect transistor (TFET) structure is
proposed. This paper explores the effect of the traps and noise on the electrical …
proposed. This paper explores the effect of the traps and noise on the electrical …
Impact of temperature on linearity and harmonic distortion characteristics of underlapped FinFET
In this paper, the performance of asymmetric underlapped FinFETs (U-FinFETs) is analyzed
for linearity and harmonic distortion at high temperatures. The harmonic distortion that arises …
for linearity and harmonic distortion at high temperatures. The harmonic distortion that arises …
Linearity Analysis of Charge Plasma-Induced Graded Channel Nanotube at Varying Temperatures
Silicon-based Graded Channel Nanotube MOSFET (GC-NTFET) has been analyzed for the
change its surrounding temperature brings in its linearity performance. In this research …
change its surrounding temperature brings in its linearity performance. In this research …
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K
The linearity of triple gate nanowire transistors (NWs) implemented on a Silicon-On-Insulator
(SOI) substrate is investigated in this work considering temperature (T) influence. The …
(SOI) substrate is investigated in this work considering temperature (T) influence. The …
Analytical modelling of threshold voltage for underlap Fully Depleted Silicon-On-Insulator MOSFET
In this article, surface-potential-based analytical threshold voltage model for underlap Fully
Depleted Silicon-On-Insulator MOSFET (underlap-SOI) is developed by solving two …
Depleted Silicon-On-Insulator MOSFET (underlap-SOI) is developed by solving two …
Analysis of noise performance in InAs DG-MOSHEMT
S Tamilselvi, S Tamilarasi… - 2017 Devices for …, 2017 - ieeexplore.ieee.org
In this paper the noise performance of double gate (DG) InAs MOS-HEMT with AI2O3
dielectric has been studied. In semiconductor devices noise occurs at near or critical …
dielectric has been studied. In semiconductor devices noise occurs at near or critical …