Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4× 10
16–7.16× 10 17 cm− 3 was studied in longitudinal magnetic field 0–14 T in the temperature …

The study of the magnetoresistance in InSb whiskers with an impurity concentration in the
vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in …

Strain influence on the longitudinal magnetoresistance for the n-type conductivity InSb
whiskers doped by Sn to concentration 6· 10 16–6· 10 17 сm–3 was studied in the …

The transverse and longitudinal magnetoresistances of GaSb microcrystals with tellurium
do** concentration of 1.7× 10 17 cm− 3 under the influence of uniaxial compression strain …

The magnetoresistance of GaP x As1− x (x= 0.4) whiskers with a do** concentration of
silicon in the range from the dielectric side of metal-insulated transition (MIT)(~ 1017 cm− 3) …

The magnetoresistance of GaP x As 1-x (x= 0… 0.45) whiskers with do** concentration of
silicon in the range from the deep dielectric side of metal-insulated transition (~ 10 17 сm-3) …

High electron mobility transistor (HEMT) is the futuristic development of the transistor in
migration of the nm technology for integration of many devices in a single chip. Moving …

Проведено дослідження магнітоопору ниткоподібних кристалів InSb з концентрацією
домішки поблизу переходу метал-діелектрик в інтервалі низьких температур 4, 2–77 К в …

The influence of deformation on magnetoresistance features in indium antimonide and
gallium antimonide whiskers of n-type conductivity with different do** concentration in the …