Buried‐channel semiconductor heterostructures are an archetype material platform for the
fabrication of gated semiconductor quantum devices. Sharp confinement potential is …

Silicon has been a core material for digital computing owing to its high mobility, stability
oxide interface, mature manufacturing technologies for more than half a century. While …

Highly uniform quantum systems are essential for the practical implementation of scalable
quantum processors. While quantum dot spin qubits based on semiconductor technology …

Silicon–germanium heterostructures are a promising quantum circuit platform, but crucial
aspects, such as the long-term charge dynamics and cooldown-to-cooldown variations, are …

The small footprint of semiconductor qubits is favorable for scalable quantum computing.
However, their size also makes them sensitive to their local environment and variations in …

Si/SiGe heterostructures are of high interest for high-mobility transistor and qubit
applications, specifically for operations below 4.2 K. In order to optimize parameters such as …

We report experimental evidence of ballistic hole transport in one-dimensional quantum
wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we …

We investigate the effect of surface tunneling on charge distributions of two-dimensional
hole gases (2DHGs) in undoped Ge/GeSi heterostructures. As in the electron channel case …

We report the magneto-transport study and scattering mechanism analysis of a series of
increasingly shallow Si/SiGe quantum wells with depth ranging from∼ 100 nm to∼ 10 nm …

We report the magneto-transport, scattering mechanisms, and effective mass analysis of an
ultra-low density two-dimensional hole gas capacitively induced in an undoped strained …