Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
The aim of this review paper is to describe in a comprehensive manner the current
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
Geometry dependence of total-dose effects in bulk FinFETs
<? Pub Dtl=""?> The total ionizing dose (TID) response of bulk FinFETs is investigated for
various geometry variations, such as fin width, channel length, and fin pitch. The buildup of …
various geometry variations, such as fin width, channel length, and fin pitch. The buildup of …
Total ionizing dose effects in multiple-gate field-effect transistor
M Gaillardin, C Marcandella, M Martinez… - Semiconductor …, 2017 - iopscience.iop.org
This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect
transistors. The impact of device architecture, geometry and scaling on the TID response of …
transistors. The impact of device architecture, geometry and scaling on the TID response of …
Laser-and heavy ion-induced charge collection in bulk FinFETs
F El-Mamouni, EX Zhang, ND Pate… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
Through-wafer two-photon absorption laser experiments were performed on bulk FinFETs.
Transients show distinct signatures for charge collection from drift and diffusion …
Transients show distinct signatures for charge collection from drift and diffusion …
Bias dependence of total-dose effects in bulk FinFETs
The total ionizing dose response of triple-well FinFETs is investigated for various bias
conditions. Experimental results show that irradiation with the transistor in the OFF state with …
conditions. Experimental results show that irradiation with the transistor in the OFF state with …
Heavy-ion-induced current transients in bulk and SOI FinFETs
Measured heavy-ion induced current transients are compared for two different junction
contact schemes (dumbbell and saddle) in bulk FinFETs. Devices with saddle contacts …
contact schemes (dumbbell and saddle) in bulk FinFETs. Devices with saddle contacts …
Improved simulation of ion track structures using new Geant4 models—Impact on the modeling of advanced technologies response
M Raine, A Valentin, M Gaillardin… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
New “MuElec” models and processes are developed and implemented in Geant4 for the
generation of low energy electrons in silicon by incident electrons, protons and heavy ions …
generation of low energy electrons in silicon by incident electrons, protons and heavy ions …
Total ionizing dose response and annealing behavior of bulk nFinFETs with ON-state bias irradiation
L Yang, Q Zhang, Y Huang, Z Zheng… - … on Nuclear Science, 2018 - ieeexplore.ieee.org
The total ionizing dose response of bulk nFinFETs with multiple gate lengths and multiple
fins is investigated for on-state bias condition. Experiments and Technology Computer Aided …
fins is investigated for on-state bias condition. Experiments and Technology Computer Aided …
TID response of bulk Si PMOS FinFETs: bias, fin width, and orientation dependence
Z Ren, X An, G Li, G Chen, M Li, G Yu… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
The total ionizing dose (TID) response of bulk Si PMOS FinFETs with two fin widths and two
types of fin orientation (standard and 45° rotated) is experimentally investigated under four …
types of fin orientation (standard and 45° rotated) is experimentally investigated under four …