Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Trilayer memory capacitors of control HfO 2/floating gate of Ge nanoparticles in HfO 2/tunnel
HfO 2/Si substrate deposited by magnetron sputtering and subsequently annealed are …
HfO 2/Si substrate deposited by magnetron sputtering and subsequently annealed are …
Towards extended gate field effect transistor-based radiation sensors: impact of thicknesses and radiation doses on al-doped zinc oxide sensitivity
Radiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical
physics. Continuous advancement in develo** economical, sensitive, and compact …
physics. Continuous advancement in develo** economical, sensitive, and compact …
Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films
Layers and devices utilizing semiconductor nanocrystals have been the subjects of intensive
research due to applications in opto-and microelectronic devices, solar cells, detectors …
research due to applications in opto-and microelectronic devices, solar cells, detectors …
Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature
SiO x layers with x= 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
Structural, compositional and electrical characterization of Si-rich SiOx layers suitable for application in light sensors
Abstract Metal-Oxide-Silicon (MOS) structures containing silicon nanoparticles (SiNPs) in
three different gate dielectrics, single SiO x layer (c-Si/SiNPs-SiO x), two-region (c-Si/thermal …
three different gate dielectrics, single SiO x layer (c-Si/SiNPs-SiO x), two-region (c-Si/thermal …
A laser and electric pulse modulated nonvolatile photoelectric response in nanoscale copper dusted metal‐oxide‐semiconductor structures
Z Gan, P Zhou, A Dong, D Zheng… - Advanced Electronic …, 2018 - Wiley Online Library
A novel photoelectric response observed in a nanoscale Cu‐dusted Cu–SiO2–Si structure is
reported. By combining the application of a short voltage pulse with laser illumination, the …
reported. By combining the application of a short voltage pulse with laser illumination, the …
Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation
Homogeneous films from SiO x (x= 1.2, 1.3) were deposited on crystalline Si substrates by
thermal evaporation of silicon monoxide in vacuum. A part of the films was further annealed …
thermal evaporation of silicon monoxide in vacuum. A part of the films was further annealed …
[PDF][PDF] Nuclear Inst. and Methods in Physics Research B
Homogeneous films from SiOx (x= 1.2, 1.3) were deposited on crystalline Si substrates by
thermal evaporation of silicon monoxide in vacuum. A part of the films was further annealed …
thermal evaporation of silicon monoxide in vacuum. A part of the films was further annealed …
MOS Dosimeter Based on Ge Nanocrystals in Hfo2
Trilayer MOS capacitors gate HfO 2/floating gate of Ge nanocrystals in HfO 2/tunnel HfO 2/Si
substrate were prepared in the aim to be used for the detection of ionizing radiation …
substrate were prepared in the aim to be used for the detection of ionizing radiation …