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Heusler alloys for spintronic devices: review on recent development and future perspectives
Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …
The advantages of using these alloys are good lattice matching with major substrates, high …
Simple rules for the understanding of Heusler compounds
Heusler compounds are a remarkable class of intermetallic materials with 1: 1: 1 (often
called Half-Heusler) or 2: 1: 1 composition comprising more than 1500 members. Today …
called Half-Heusler) or 2: 1: 1 composition comprising more than 1500 members. Today …
Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling
Giant tunnel magnetoresistance (TMR) ratios of up to 1995% at 4.2 K and up to 354% at 290
K were obtained for epitaxial Co 2 MnSi/MgO/Co 2 MnSi magnetic tunnel junctions (MTJs) …
K were obtained for epitaxial Co 2 MnSi/MgO/Co 2 MnSi magnetic tunnel junctions (MTJs) …
Structural, Electronic, Magnetic, Elastic, Thermoelectric, and Thermal Properties of Co2FeGa1−xSix Heusler Alloys: First-Principles Calculations
In this study, we have investigated the structural, electronic, magnetic, elastic, thermoelectric,
and thermal properties of Co2FeGa1− xSix with 0≤ x≤ 1 through the first-principles density …
and thermal properties of Co2FeGa1− xSix with 0≤ x≤ 1 through the first-principles density …
Heusler compounds—A material class with exceptional properties
The class of Heusler compounds, including the XYZ and the X 2 YZ compounds, has not
only an endless number of members, but also a vast variety of properties can be found in …
only an endless number of members, but also a vast variety of properties can be found in …
Spin-transistor electronics: An overview and outlook
S Sugahara, J Nitta - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Spin transistors are a new concept device that unites an ordinary transistor with the useful
functions of a spin (magnetoresistive) device. They are expected to be a building block for …
functions of a spin (magnetoresistive) device. They are expected to be a building block for …
Heusler compounds and spintronics
CJ Palmstrøm - Progress in Crystal Growth and Characterization of …, 2016 - Elsevier
Heusler compounds are a large group of intermetallic compounds with over 1000 members
with similar crystal structures having a vast array of tunable properties. These properties …
with similar crystal structures having a vast array of tunable properties. These properties …
Emerging three-terminal magnetic memory devices
SW Lee, KJ Lee - Proceedings of the IEEE, 2016 - ieeexplore.ieee.org
Spin-transfer torques can switch magnetizations via a current passing through a magnetic
tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer …
tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer …
From MTJ device to hybrid CMOS/MTJ circuits: A review
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …
issues of static power dissipation and volatility suffered by the complementary metal-oxide …
Influence of film composition in quaternary Heusler alloy Co2 (Mn, Fe) Si thin films on tunnelling magnetoresistance of Co2 (Mn, Fe) Si/MgO-based magnetic tunnel …
H Liu, T Kawami, K Moges, T Uemura… - Journal of Physics D …, 2015 - iopscience.iop.org
The influence of off-stoichiometry on the half-metallic character of quaternary Heusler alloy
thin films of Co 2 (Mn, Fe) Si (CMFS) was investigated by studying the composition …
thin films of Co 2 (Mn, Fe) Si (CMFS) was investigated by studying the composition …