Heusler alloys for spintronic devices: review on recent development and future perspectives

K Elphick, W Frost, M Samiepour, T Kubota… - … and technology of …, 2021 - Taylor & Francis
Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …

Simple rules for the understanding of Heusler compounds

T Graf, C Felser, SSP Parkin - Progress in solid state chemistry, 2011 - Elsevier
Heusler compounds are a remarkable class of intermetallic materials with 1: 1: 1 (often
called Half-Heusler) or 2: 1: 1 composition comprising more than 1500 members. Today …

Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling

H Liu, Y Honda, T Taira, K Matsuda, M Arita… - Applied Physics …, 2012 - pubs.aip.org
Giant tunnel magnetoresistance (TMR) ratios of up to 1995% at 4.2 K and up to 354% at 290
K were obtained for epitaxial Co 2 MnSi/MgO/Co 2 MnSi magnetic tunnel junctions (MTJs) …

Structural, Electronic, Magnetic, Elastic, Thermoelectric, and Thermal Properties of Co2FeGa1−xSix Heusler Alloys: First-Principles Calculations

MY Raïâ, R Masrour, M Hamedoun, J Kharbach… - … of Superconductivity and …, 2023 - Springer
In this study, we have investigated the structural, electronic, magnetic, elastic, thermoelectric,
and thermal properties of Co2FeGa1− xSix with 0≤ x≤ 1 through the first-principles density …

Heusler compounds—A material class with exceptional properties

T Graf, SSP Parkin, C Felser - IEEE Transactions on Magnetics, 2010 - ieeexplore.ieee.org
The class of Heusler compounds, including the XYZ and the X 2 YZ compounds, has not
only an endless number of members, but also a vast variety of properties can be found in …

Spin-transistor electronics: An overview and outlook

S Sugahara, J Nitta - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Spin transistors are a new concept device that unites an ordinary transistor with the useful
functions of a spin (magnetoresistive) device. They are expected to be a building block for …

Heusler compounds and spintronics

CJ Palmstrøm - Progress in Crystal Growth and Characterization of …, 2016 - Elsevier
Heusler compounds are a large group of intermetallic compounds with over 1000 members
with similar crystal structures having a vast array of tunable properties. These properties …

Emerging three-terminal magnetic memory devices

SW Lee, KJ Lee - Proceedings of the IEEE, 2016 - ieeexplore.ieee.org
Spin-transfer torques can switch magnetizations via a current passing through a magnetic
tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer …

From MTJ device to hybrid CMOS/MTJ circuits: A review

VK Joshi, P Barla, S Bhat, BK Kaushik - IEEE Access, 2020 - ieeexplore.ieee.org
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …

Influence of film composition in quaternary Heusler alloy Co2 (Mn, Fe) Si thin films on tunnelling magnetoresistance of Co2 (Mn, Fe) Si/MgO-based magnetic tunnel …

H Liu, T Kawami, K Moges, T Uemura… - Journal of Physics D …, 2015 - iopscience.iop.org
The influence of off-stoichiometry on the half-metallic character of quaternary Heusler alloy
thin films of Co 2 (Mn, Fe) Si (CMFS) was investigated by studying the composition …