Electric-field control of magnetism is significant for the next generation of large-capacity and
low-power data storage technology. In this regard, the renaissance of a multiferroic …

To overcome a bottleneck in spintronic applications such as those of ultralow-power
magnetoresistive random-access memory devices, the electric-field control of magnetization …

The magnetization direction of a ferromagnetic (FM) film deposited onto a ferroelectric (FE)
substrate undergoes significant changes when it is subjected to applied electric fields …

Electric‐field control of magnetism in ferromagnetic/ferroelectric multiferroic heterostructures
is a promising way to realize fast and nonvolatile random‐access memory with high density …

Uniaxial magnetic anisotropy was imposed on a CoFeB film by applying an in-plane
magnetic field during growth. Electrically driven strain from a ferroelectric 0.68 Pb (Mg 1/3 …

Multiferroic heterostructures based on the strain-mediated mechanism present ultralow heat
dissipation and large magnetoelectric coupling coefficient, two conditions that require …

Controlling magnetism by an electric field is of critical importance for the future development
of ultralow-power electronic and spintronic devices. Progress has been made in electrically …

We experimentally show a giant magnetoelectric (ME) effect at room temperature in an
interfacial multiferroic heterostructure consisting of L2 1-ordered Co 2 FeSi and Pb (Mg 1/3 …

Converse magnetoelectric coupling in artificial multiferroics is generally modeled through
three possible mechanisms: charge transfer, strain mediated effects or ion migration. Here …

A ferromagnetic (FM) thin film deposited on a substrate of Pb (Mg 1/3 Nb 2/3) O 3-PbTiO 3
(PMN-PT) is an appealing heterostructure for the electrical control of magnetism, which …